NJW1302G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

200W

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 3A 5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gain Bandwidth Product :

30MHz

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Published :

2007

Length :

15.8mm

ECCN Code :

EAR99

Element Configuration :

Single

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

250V

Max Collector Current :

15A

Operating Temperature :

-65°C~150°C TJ

Max Breakdown Voltage :

60V

Height :

20.1mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

50μA ICBO

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

11 Weeks

Vce Saturation (Max) @ Ib, Ic :

600mV @ 800mA, 8A

Width :

5mm

Frequency :

30MHz

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

600mV

Polarity/Channel Type :

PNP

Number of Terminations :

3

Packaging :

Tube

Mounting Type :

Through Hole

Radiation Hardening :

No

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation :

200W

hFE Min :

75

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Type :

PNP

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

250V

Collector Base Voltage (VCBO) :

250V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Transition Frequency :

30MHz