NJW1302G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gain Bandwidth Product :

30MHz

Number of Terminations :

3

Polarity/Channel Type :

PNP

Max Collector Current :

15A

JESD-609 Code :

e3

Max Breakdown Voltage :

60V

Pin Count :

3

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Pins :

3

Transition Frequency :

30MHz

Operating Temperature :

-65°C~150°C TJ

Frequency :

30MHz

Length :

15.8mm

Collector Emitter Voltage (VCEO) :

250V

Height :

20.1mm

Vce Saturation (Max) @ Ib, Ic :

600mV @ 800mA, 8A

hFE Min :

75

Packaging :

Tube

Published :

2007

Factory Lead Time :

11 Weeks

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

250V

Lead Free :

Lead Free

Max Power Dissipation :

200W

Element Configuration :

Single

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation :

200W

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

600mV

Width :

5mm

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 3A 5V

Current - Collector Cutoff (Max) :

50μA ICBO

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

250V