NJW0302G
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- Mfr.Part #
- NJW0302G
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 250V 15A TO3P-3L
- Stock
- 4,410
- In Stock ：
- 4,410
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- hFE Min :
- 75
- Weight :
- 4.535924g
- Width :
- 5mm
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Factory Lead Time :
- 26 Weeks
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 250V
- Length :
- 15.8mm
- Max Power Dissipation :
- 150W
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 3A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Packaging :
- Tube
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 250V
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 30MHz
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 30MHz
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Height :
- 20.1mm
- Power Dissipation :
- 150W
- Frequency :
- 30MHz
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 250V
- Published :
- 2007
- Max Collector Current :
- 15A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- NJW0302G
PNP -65°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
NJW0302G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 3A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500mA, 5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
NJW0302G Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
NJW0302G Applications
There are a lot of ON Semiconductor
NJW0302G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJW0281G | onsemi | 1,080 | TRANS NPN 250V 15A TO3P-3L |
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