NJD35N04G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1.5V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

350V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

350V

Pbfree Code :

yes

Published :

2005

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Max Breakdown Voltage :

350V

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Packaging :

Tube

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

50μA

Pin Count :

3

Collector Emitter Breakdown Voltage :

350V

Polarity :

NPN

Transistor Type :

NPN - Darlington

Number of Terminations :

2

Max Collector Current :

4A

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 20mA, 2A

Max Power Dissipation :

45W

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

700V

Element Configuration :

Single

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

NJD35N04

Radiation Hardening :

No

Number of Pins :

3

Case Connection :

COLLECTOR

Factory Lead Time :

15 Weeks

Width :

6.22mm

Current Rating :

4A

Number of Elements :

1

Terminal Form :

Gull wing

Transition Frequency :

90MHz

Weight :

4.535924g

JESD-30 Code :

R-PSSO-G2

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 2A 2V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.38mm

Halogen Free :

Halogen Free

Frequency - Transition :

90MHz