MV2N4859

Manufacturer :

Microchip Technology

Product Category :

Transistors - JFETs

Drain-source On Resistance-Max :

25Ohm

Voltage - Breakdown (V(BR)GSS) :

30V

FET Technology :

JUNCTION

Terminal Position :

BOTTOM

Power - Max :

360mW

Gate to Source Voltage (Vgs) :

-30V

Operating Mode :

Depletion Mode

Operating Temperature :

-65°C~200°C TJ

Pbfree Code :

No

Feedback Cap-Max (Crss) :

8 pF

Resistance - RDS(On) :

25Ohm

FET Type :

N-Channel

Radiation Hardening :

No

Current - Drain (Idss) @ Vds (Vgs=0) :

175mA @ 15V

Package / Case :

TO-206AA, TO-18-3 Metal Can

Terminal Finish :

TIN LEAD

Input Capacitance (Ciss) (Max) @ Vds :

18pF @ 10V

HTS Code :

8541.21.00.95

Published :

2007

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Number of Terminations :

3

Element Configuration :

Single

Packaging :

Bulk

JESD-609 Code :

e0

Voltage - Cutoff (VGS off) @ Id :

10V @ 500pA

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

Number of Elements :

1

ECCN Code :

EAR99

Number of Pins :

3

Series :

Military, MIL-PRF-19500/385