MURF10060

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Reverse Recovery Time :

75 ns

Average Rectified Current :

100A

Forward Voltage :

1.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Terminal Form :

UNSPECIFIED

Element Configuration :

Single

Number of Elements :

2

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Forward (Vf) (Max) @ If :

1.7V @ 50A

Max Repetitive Reverse Voltage (Vrrm) :

600V

Peak Reverse Current :

25μA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Phases :

1

Diode Element Material :

SILICON

Reverse Voltage :

600V

Diode Configuration :

1 Pair Common Cathode

Operating Temperature - Junction :

-55°C~150°C

Mount :

Chassis Mount, Through Hole

Current - Reverse Leakage @ Vr :

25μA @ 50V

ECCN Code :

EAR99

Termination :

Solder

Orientation :

RIGHT ANGLE

Terminal Position :

UPPER

Pitch :

2.54mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Surge Current :

400A

Number of Contacts :

17

Factory Lead Time :

4 Weeks

Package / Case :

TO-244AB

Min Operating Temperature :

-40°C

Forward Current :

50A

Packaging :

Bulk

Current - Average Rectified (Io) :

100A DC

Max Operating Temperature :

70°C

HTS Code :

8541.10.00.80

Diode Type :

Standard

Number of Pins :

2

Max Forward Surge Current (Ifsm) :

400A

RoHS Status :

RoHS Compliant

Max Reverse Voltage (DC) :

600V

Application :

SUPER FAST RECOVERY

Mounting Type :

Chassis Mount

Number of Terminations :

2