MT58L256L32FT-10

Manufacturer :

Micron Technology

Product Category :

Memory

Package :

Bulk

Width :

14 mm

Number of Words :

262144 words

Write Cycle Time - Word, Page :

-

Product Status :

Active

JESD-609 Code :

e0

Base Product Number :

MT58L256L32

Voltage - Supply :

3.135V ~ 3.6V

Qualification Status :

Not Qualified

RoHS :

Compliant

Output Characteristics :

3-STATE

Memory Format :

SRAM

Memory Size :

8Mbit

Organization :

256KX32

Operating Temperature :

0°C ~ 70°C (TA)

Length :

20 mm

Parallel/Serial :

Parallel

Technology :

SRAM - Synchronous

Supply Current-Max :

0.25 mA

Reach Compliance Code :

Unknown

Memory IC Type :

CACHE SRAM

Number of Terminals :

100

Mounting Type :

Surface Mount

Surface Mount :

yes

Standby Current-Max :

0.01 A

Terminal Form :

Gull wing

Number of Functions :

1

ECCN Code :

3A991.B.2.A

Temperature Grade :

COMMERCIAL

Access Time :

10 ns

Supplier Device Package :

100-TQFP (14x20.1)

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

3.6 V

Terminal Position :

QUAD

Memory Type :

Volatile

Power Supplies :

3.3 V

Additional Feature :

FLOW-THROUGH ARCHITECTURE

Series :

SYNCBURST™

Subcategory :

SRAMs

HTS Code :

8542.32.00.41

JESD-30 Code :

R-PQFP-G100

I/O Type :

COMMON

Package Shape :

RECTANGULAR

Memory Width :

32

Pin Count :

100

Operating Mode :

SYNCHRONOUS

Package / Case :

100-LQFP

Memory Organization :

256K x 32

Manufacturer :

Micron Technology Inc

Terminal Finish :

Tin/Lead (Sn/Pb)

Supply Voltage-Min (Vsup) :

3.135 V

Memory Density :

8388608 bit

Standby Voltage-Min :

3.14 V

Terminal Pitch :

0.65 mm

Seated Height-Max :

1.6 mm

Clock Frequency :

66 MHz