MT57V1MH18EF-6

Manufacturer :

Micron Technology

Product Category :

Memory

Standby Voltage-Min :

2.4 V

Number of Terminals :

165

Output Characteristics :

3-STATE

Power Supplies :

1.5/1.8,2.5 V

Number of Functions :

1

Standby Current-Max :

0.15 A

Terminal Form :

Ball

Additional Feature :

PIPELINED ARCHITECTURE

HTS Code :

8542.32.00.41

Length :

15 mm

Subcategory :

SRAMs

Package :

Bulk

Memory Width :

18

I/O Type :

COMMON

JESD-30 Code :

R-PBGA-B165

Package Shape :

RECTANGULAR

Product Status :

Active

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Pitch :

1 mm

Reach Compliance Code :

Unknown

Organization :

1MX18

Supply Voltage-Min (Vsup) :

2.4 V

Series :

*

Terminal Position :

BOTTOM

Memory Density :

18874368 bit

Supply Current-Max :

0.2 mA

Parallel/Serial :

Parallel

Operating Mode :

SYNCHRONOUS

Manufacturer :

Micron Technology Inc

Temperature Grade :

COMMERCIAL

Seated Height-Max :

1.2 mm

Pin Count :

165

Width :

13 mm

JESD-609 Code :

e0

Supply Voltage-Max (Vsup) :

2.6 V

Qualification Status :

Not Qualified

Number of Words :

1048576 words

Memory IC Type :

DDR SRAM

Surface Mount :

yes

ECCN Code :

3A991.B.2.A

Technology :

CMOS