MT54V1MH18EF-7.5

Manufacturer :

Micron Technology

Product Category :

Memory

Output Characteristics :

3-STATE

Standby Voltage-Min :

2.4 V

Memory Density :

18874368 bit

Supply Voltage-Min (Vsup) :

2.4 V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Functions :

1

Standby Current-Max :

0.125 A

JESD-609 Code :

e0

I/O Type :

Separate

Organization :

1MX18

ECCN Code :

3A991.B.2.A

Terminal Pitch :

1 mm

Factory Lead Time :

1 Week

Memory Width :

18

Pin Count :

165

Terminal Position :

BOTTOM

Supply Current-Max :

0.23 mA

Width :

13 mm

HTS Code :

8542.32.00.41

Package Shape :

RECTANGULAR

Parallel/Serial :

Parallel

Manufacturer :

Micron Technology Inc

Memory IC Type :

QDR SRAM

Technology :

CMOS

JESD-30 Code :

R-PBGA-B165

Temperature Grade :

COMMERCIAL

Power Supplies :

1.5/1.8,2.5 V

Reach Compliance Code :

Unknown

Product Status :

Active

Number of Terminals :

165

Terminal Form :

Ball

Number of Words :

1048576 words

Package :

Bulk

Supply Voltage-Max (Vsup) :

2.6 V

Surface Mount :

yes

Length :

15 mm

Subcategory :

SRAMs

Additional Feature :

PIPELINED ARCHITECTURE

Qualification Status :

Not Qualified

Seated Height-Max :

1.2 mm

Series :

*

Operating Mode :

SYNCHRONOUS