MT53B384M32D2DS-062 XT:B

Memory Micron Technology MT53B384M32D2DS-062 XT:B Overview

The Memory Micron Technology MT53B384M32D2DS-062 XT:B represents a high-performance DRAM solution designed to meet the increasing demands of sophisticated electronic devices. This integrated circuit from Micron Technology features a substantial 12Gbit density and a high-speed operation at 1600MHz. Engineered for efficiency, it comes in a compact 200-ball fine pitch BGA package, which ensures optimal thermal performance and minimal footprint on system boards. Ideal for applications requiring high bandwidth and low latency, this DRAM module is crucial for enhancing multitasking and improving overall system responsiveness in advanced computing environments.

MT53B384M32D2DS-062 XT:B Features

• Density: 12 Gbit, providing substantial memory capacity for complex operations.
• Speed: 1600 MHz, which enables faster processing times for demanding computing tasks.
• Package: 200 WFBGA, allowing for efficient space utilization and better integration into tight spaces.

MT53B384M32D2DS-062 XT:B Applications

• Smartphones and Tablets: Utilizes high-speed DRAM for smooth multitasking and quick app launching.
• Personal Computers: Enhances system performance with increased memory bandwidth, ideal for intensive software applications.
• Server Infrastructure: Supports server operations by providing high capacity and speed necessary for managing large-scale data transactions and applications in cloud computing.
• Gaming Consoles: Improves gaming experiences by reducing load times and facilitating complex, real-time game computations.