MT49H8M36SJ-25E:B

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Mfr.Part #
MT49H8M36SJ-25E:B
Manufacturer
Micron Technology
Package / Case
144-TFBGA
Datasheet
Download
Description
IC DRAM 288MBIT PARALLEL 144FBGA
Stock
5,090
In Stock :
5,090

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Manufacturer :
Micron Technology
Product Category :
Memory
RoHS Status :
ROHS3 Compliant
Organization :
8MX36
Supply Voltage-Min (Vsup) :
1.7V
Additional Feature :
AUTO REFRESH
Number of Terminations :
144
Memory Size :
288Mb 8M x 36
Voltage - Supply :
1.7V~1.9V
Packaging :
Tray
Number of Ports :
1
Operating Supply Voltage :
1.8V
Supply Voltage-Max (Vsup) :
1.9V
Density :
228 Mb
Supply Voltage :
1.8V
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Factory Lead Time :
8 Weeks
Operating Temperature :
0°C~95°C TC
Memory Interface :
Parallel
Terminal Pitch :
1mm
Memory Width :
36
Operating Mode :
SYNCHRONOUS
Access Time :
15ns
Contact Plating :
Copper, Silver, Tin
Memory Type :
Volatile
Package / Case :
144-TFBGA
Terminal Position :
BOTTOM
Published :
2015
Memory Format :
DRAM
Max Frequency :
400MHz
Address Bus Width :
21b
Data Bus Width :
36b
Height Seated (Max) :
1.2mm
Mount :
Surface Mount
Number of Functions :
1
Length :
18.5mm
Number of Pins :
144
Datasheets
MT49H8M36SJ-25E:B
Introducing Memory Micron Technology MT49H8M36SJ-25E:B from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:144, Mounting Type:Surface Mount, Operating Temperature:0°C~95°C TC, Package / Case:144-TFBGA, Number of Pins:144, MT49H8M36SJ-25E:B pinout, MT49H8M36SJ-25E:B datasheet PDF, MT49H8M36SJ-25E:B amp .Beyond Memory Micron Technology MT49H8M36SJ-25E:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT49H8M36SJ-25E:B


Memory Micron Technology MT49H8M36SJ-25E:B Overview

The Memory Micron Technology MT49H8M36SJ-25E:B is a high-performance 288Mbit DRAM integrated circuit designed by Micron Technology, encapsulated in a 144-ball FBGA package. Engineered to meet the rigorous demands of advanced computing systems, this IC provides a reliable parallel interface, robust temperature tolerances, and a compact form factor, making it ideal for a wide array of industrial applications. This DRAM module excels in delivering fast data transmission rates and low latency, tailored to facilitate high-speed operations and enhanced data integrity in complex systems.

MT49H8M36SJ-25E:B Features

This DRAM module stands out for its superior performance features, including high-density 288Mbit storage capacity, parallel communication interface for efficient data handling, and compatibility with a broad temperature range, suitable for demanding operational environments. Its compact 144FBGA packaging ensures a minimized footprint on system boards, crucial for high-density configurations in modern electronic devices.

MT49H8M36SJ-25E:B Applications

  • Networking Equipment: Utilized in routers, switches, and networking panels to manage data flow efficiently and maintain system integrity under high-load conditions.
  • Computing Devices: Deployed in desktops, laptops, and servers where memory density and speed are critical for multitasking and high-speed data processing.
  • Consumer Electronics: Integral to enhancing user experiences in products like digital cameras and gaming consoles, where quick access to data is necessary for high-performance functionality.
  • Industrial Systems: Key in automation and control systems, where stable and reliable memory is crucial for consistent operations and real-time processing.
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