MT48V8M32LFF5-8
- Mfr.Part #
- MT48V8M32LFF5-8
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 90VFBGA
- Stock
- 32,227
- In Stock :
- 32,227
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Organization :
- 8MX32
- Pin Count :
- 90
- Standby Current-Max :
- 0.00001A
- HTS Code :
- 8542.32.00.24
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- 90-VFBGA
- Operating Mode :
- SYNCHRONOUS
- Memory Type :
- Volatile
- Memory Width :
- 32
- Supply Voltage-Max (Vsup) :
- 2.7V
- Write Cycle Time - Word, Page :
- 15ns
- Sequential Burst Length :
- 1248FP
- Density :
- 256 Mb
- Qualification Status :
- Not Qualified
- Published :
- 2005
- Nominal Supply Current :
- 125mA
- Supply Voltage :
- 2.5V
- Peak Reflow Temperature (Cel) :
- 235
- Operating Temperature :
- 0°C~70°C TA
- Memory Interface :
- Parallel
- Reach Compliance Code :
- not_compliant
- Voltage - Supply :
- 2.3V~2.7V
- I/O Type :
- COMMON
- Number of Ports :
- 1
- Number of Functions :
- 1
- Memory Format :
- DRAM
- Mounting Type :
- Surface Mount
- Length :
- 13mm
- Power Supplies :
- 2.5V
- Additional Feature :
- AUTO/SELF REFRESH
- Lead Free :
- Contains Lead
- Number of Terminations :
- 90
- Access Time :
- 7ns
- Packaging :
- Tray
- Interleaved Burst Length :
- 1248
- Refresh Cycles :
- 4096
- Memory Size :
- 256Mb 8M x 32
- Terminal Pitch :
- 0.8mm
- Base Part Number :
- MT48V8M32
- Address Bus Width :
- 14b
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Height Seated (Max) :
- 1mm
- Supply Voltage-Min (Vsup) :
- 2.3V
- Operating Supply Voltage :
- 3.3V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Clock Frequency :
- 125MHz
- Number of Pins :
- 90
- Datasheets
- MT48V8M32LFF5-8

Memory Micron Technology MT48V8M32LFF5-8 Overview
The Memory Micron Technology MT48V8M32LFF5-8 IC DRAM exemplifies cutting-edge memory technology tailored for demanding applications that require high-speed data processing and storage. With its 256Mbit density and a sophisticated 90VFBGA package, this DRAM integrated circuit ensures reliable and high-performance data handling capabilities, essential for modern electronic systems. Its compact footprint and low power consumption make it an ideal solution for manufacturers looking to optimize their hardware for both efficiency and cost-effectiveness, thereby attracting B2B customers seeking to enhance their products with top-tier memory components.
MT48V8M32LFF5-8 Features
This DRAM module offers several notable features including its parallel interface, which provides quick data transfer rates that are crucial for high-performance computing environments. The 256Mbit capacity allows for substantial data storage within a compact 90VFBGA package, enhancing device miniaturization without compromising performance. Additionally, its operational efficiency is highlighted by its compatibility with a wide range of operating temperatures, making it a versatile choice for diverse electronic applications.
MT48V8M32LFF5-8 Applications
- Consumer Electronics: Utilized in devices such as smartphones and tablets to manage multiple applications simultaneously without sacrificing speed or performance.
- Automotive Systems: Integrated into infotainment and advanced driver-assistance systems (ADAS) where fast data retrieval and storage are critical for real-time performance.
- Networking Equipment: Employs in routers and switches to enhance data flow management capabilities essential for maintaining system integrity and preventing bottlenecks.
- Industrial Automation: Applied in machinery control systems to ensure smooth and efficient operation, handling complex computations and data logging.
- Computing: Key component in PCs and servers, where it supports extensive multitasking and aids in maintaining optimal efficiency during high-load conditions.
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