MT48LC4M16A2P-7E:J

Manufacturer :

Micron Technology

Product Category :

Memory

JESD-609 Code :

e3

Radiation Hardening :

No

Data Bus Width :

16b

Supply Voltage-Max (Vsup) :

3.6V

Sequential Burst Length :

1248FP

Nominal Supply Current :

100mA

Access Time :

5.4ns

Address Bus Width :

14b

Additional Feature :

AUTO/SELF REFRESH

Organization :

4MX16

Memory Size :

64Mb 4M x 16

Number of Pins :

54

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Packaging :

Bulk

Operating Temperature :

0°C~70°C TA

Memory Type :

Volatile

Contact Plating :

Tin

Supply Voltage-Min (Vsup) :

3V

Terminal Pitch :

0.8mm

Number of Functions :

1

Memory Interface :

Parallel

Published :

2013

Base Part Number :

MT48LC4M16A2

Standby Current-Max :

0.0025A

Refresh Cycles :

4096

Lead Free :

Lead Free

Density :

64 Mb

Memory Format :

DRAM

Supply Voltage :

3.3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Height Seated (Max) :

1.2mm

Memory Width :

16

Number of Ports :

1

Write Cycle Time - Word, Page :

14ns

Interleaved Burst Length :

1248

Length :

22.22mm

Voltage - Supply :

3V~3.6V

Output Characteristics :

3-STATE

Mount :

Surface Mount

Operating Supply Voltage :

3.3V

RoHS Status :

ROHS3 Compliant

I/O Type :

COMMON

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Clock Frequency :

133MHz

Number of Terminations :

54

Mounting Type :

Surface Mount