MT48LC16M8A2FB-7E:G
- Mfr.Part #
- MT48LC16M8A2FB-7E:G
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 60FBGA
- Stock
- 36,791
- In Stock :
- 36,791
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Mounting Type :
- Surface Mount
- Density :
- 128 Mb
- Length :
- 16mm
- Organization :
- 16MX8
- Memory Interface :
- Parallel
- Pin Count :
- 60
- Supply Voltage :
- 3.3V
- Sequential Burst Length :
- 1248FP
- Radiation Hardening :
- No
- Terminal Pitch :
- 0.8mm
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Functions :
- 1
- Pbfree Code :
- No
- Output Characteristics :
- 3-STATE
- Package / Case :
- 60-FBGA
- Published :
- 2007
- Memory Width :
- 8
- Height Seated (Max) :
- 1.2mm
- Packaging :
- Box
- Address Bus Width :
- 14b
- Surface Mount :
- yes
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Max (Vsup) :
- 3.6V
- Number of Ports :
- 1
- Operating Supply Voltage :
- 3.3V
- Refresh Cycles :
- 4096
- Write Cycle Time - Word, Page :
- 14ns
- Terminal Position :
- BOTTOM
- Data Bus Width :
- 8B
- JESD-609 Code :
- e0
- Interleaved Burst Length :
- 1248
- ECCN Code :
- EAR99
- Memory Type :
- Volatile
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- MT48LC16M8A2
- Memory Format :
- DRAM
- Terminal Finish :
- TIN LEAD SILVER
- Number of Pins :
- 60
- HTS Code :
- 8542.32.00.02
- Supply Current-Max :
- 0.33mA
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- RoHS Status :
- Non-RoHS Compliant
- Clock Frequency :
- 133MHz
- Number of Terminations :
- 60
- Voltage - Supply :
- 3V~3.6V
- Lead Free :
- Contains Lead
- Operating Temperature :
- 0°C~70°C TA
- Access Time :
- 5.4ns
- Standby Current-Max :
- 0.002A
- Memory Size :
- 128Mb 16M x 8
- Peak Reflow Temperature (Cel) :
- 235
- I/O Type :
- COMMON
- Datasheets
- MT48LC16M8A2FB-7E:G

Memory Micron Technology MT48LC16M8A2FB-7E:G Overview
Optimize your electronic designs with the high-performance Memory Micron Technology MT48LC16M8A2FB-7E:G, a dynamic random-access memory (DRAM) integrated circuit that offers exceptional speed and reliability. Manufactured by Micron Technology, a leader in memory innovation, this IC features a 128Mbit capacity structured in a parallel architecture, ensuring efficient handling of large volumes of data. Encased in a compact 60-ball fine-pitch BGA (FBGA) package, it provides a robust solution for advanced electronic applications requiring high memory density and swift data access. This product stands out in the marketplace for its combination of high capacity, compact form factor, and proven reliability, making it an ideal choice for manufacturers looking to enhance their high-performance computing systems.
MT48LC16M8A2FB-7E:G Features
The MT48LC16M8A2FB-7E:G IC DRAM from Micron Technology integrates several key features that make it a top selection for developers and OEMs. This includes its 128Mbit storage capacity, designed for efficient parallel processing capabilities. The small 60FBGA packaging not only saves space but also allows for more streamlined board layouts. High compatibility with a wide range of operating temperatures ensures reliability in diverse environmental conditions, making it a versatile choice for various high-demand applications.
MT48LC16M8A2FB-7E:G Applications
- Computing Systems: Utilized in desktops and servers for enhanced multitasking capabilities, improving system responsiveness and data processing speeds.
- Consumer Electronics: Integral in devices such as digital cameras and gaming consoles, where quick data retrieval is crucial for user experience.
- Telecommunications: Deployed in telecommunications infrastructure to manage data flow and buffering requirements efficiently, ensuring uninterrupted service.
- Automotive Systems: Supports advanced automotive electronics, including navigation and infotainment systems, by providing rapid access to high volumes of data.
- Industrial Automation: Used in industrial control systems where processing speed and memory capacity are critical for operational accuracy and reliability.
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