MT48H8M16LFB4-8:J
- Mfr.Part #
- MT48H8M16LFB4-8:J
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54VFBGA
- Stock
- 21,906
- In Stock :
- 21,906
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- JESD-609 Code :
- e1
- Base Part Number :
- MT48H8M16
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage :
- 1.8V
- Density :
- 128 Mb
- Memory Format :
- DRAM
- Organization :
- 8MX16
- Package / Case :
- 54-VFBGA
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Functions :
- 1
- Mounting Type :
- Surface Mount
- Address Bus Width :
- 14b
- Supply Voltage-Max (Vsup) :
- 1.95V
- Memory Type :
- Volatile
- Supply Voltage-Min (Vsup) :
- 1.7V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Data Bus Width :
- 16b
- Packaging :
- Tray
- Pin Count :
- 54
- Operating Temperature :
- 0°C~70°C TA
- Number of Terminations :
- 54
- Radiation Hardening :
- No
- Voltage - Supply :
- 1.7V~1.9V
- RoHS Status :
- ROHS3 Compliant
- Memory Size :
- 128Mb 8M x 16
- Access Time :
- 7ns
- Lead Free :
- Lead Free
- Terminal Pitch :
- 0.8mm
- Height Seated (Max) :
- 1mm
- Mount :
- Surface Mount
- Length :
- 8mm
- Operating Supply Voltage :
- 1.8V
- Memory Interface :
- Parallel
- Number of Ports :
- 1
- Memory Width :
- 16
- Nominal Supply Current :
- 50mA
- ECCN Code :
- EAR99
- Clock Frequency :
- 125MHz
- Write Cycle Time - Word, Page :
- 15ns
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 54
- Published :
- 2009
- Datasheets
- MT48H8M16LFB4-8:J

Memory Micron Technology MT48H8M16LFB4-8:J Overview
The Memory Micron Technology MT48H8M16LFB4-8:J is an advanced 128Mbit DRAM chip designed for high-performance applications requiring parallel processing capabilities. Encased in a compact 54VFBGA package, this memory module from Micron Technology offers robust data storage and quick access times. It is built to provide reliable and efficient performance, essential for systems requiring fast and extensive memory operations. The design and technology implemented in the MT48H8M16LFB4-8:J make it an ideal solution for manufacturers looking to integrate high-quality memory into their next generation of electronic products.
MT48H8M16LFB4-8:J Features
This DRAM IC features a 128Mbit capacity with parallel interface, allowing for high-speed data transfer and multi-tasking capabilities essential in modern electronics. The small footprint 54VFBGA package ensures it can be incorporated into space-constrained applications without sacrificing performance. Additionally, its advanced manufacturing technology ensures low power consumption and high durability, making it suitable for intensive operational environments.
MT48H8M16LFB4-8:J Applications
- Mobile Devices: Utilized for expanding the memory capacity in smartphones and tablets to enhance multitasking and improve user experience.
- Computing: Integral in PCs and servers for handling complex tasks and large volumes of data more efficiently.
- Automotive: Used in automotive electronics to manage in-car entertainment systems and advanced driver-assistance systems (ADAS).
- Industrial: Applied in industrial automation systems for process control and machine-to-machine communication.
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