MT48H8M16LFB4-75 IT:K
- Mfr.Part #
- MT48H8M16LFB4-75 IT:K
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54VFBGA
- Stock
- 41,247
- In Stock :
- 41,247
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Size :
- 128Mb 8M x 16
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Organization :
- 8MX16
- Memory Type :
- Volatile
- Memory Density :
- 134217728 bit
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Package / Case :
- 54-VFBGA
- Memory Interface :
- Parallel
- Output Characteristics :
- 3-STATE
- Qualification Status :
- Not Qualified
- Supply Current-Max :
- 0.07mA
- Height Seated (Max) :
- 1mm
- Power Supplies :
- 1.8V
- Number of Terminations :
- 54
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Supply :
- 1.7V~1.95V
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Terminal Pitch :
- 0.8mm
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Standby Current-Max :
- 0.0002A
- Pin Count :
- 54
- Number of Functions :
- 1
- Refresh Cycles :
- 4096
- Length :
- 8mm
- Operating Temperature :
- -40°C~85°C TA
- Base Part Number :
- MT48H8M16
- Width :
- 8mm
- Clock Frequency :
- 133MHz
- Operating Mode :
- SYNCHRONOUS
- Number of Ports :
- 1
- Supply Voltage-Min (Vsup) :
- 1.7V
- Supply Voltage-Max (Vsup) :
- 1.95V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Interleaved Burst Length :
- 1248
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- yes
- HTS Code :
- 8542.32.00.02
- JESD-30 Code :
- S-PBGA-B54
- Memory Format :
- DRAM
- I/O Type :
- COMMON
- Write Cycle Time - Word, Page :
- 15ns
- Access Time :
- 5.4ns
- Memory Width :
- 16
- Supply Voltage :
- 1.8V
- Additional Feature :
- AUTO/SELF REFRESH
- Sequential Burst Length :
- 1248FP
- Datasheets
- MT48H8M16LFB4-75 IT:K

Memory Micron Technology MT48H8M16LFB4-75 IT:K Overview
The Memory Micron Technology MT48H8M16LFB4-75 IT:K is an advanced DRAM (Dynamic Random Access Memory) component designed by Micron Technology, a leader in memory and storage solutions. This integrated circuit is engineered to deliver high-speed, large-capacity memory in a compact 54VFBGA (Very Fine Ball Grid Array) package. Ideal for applications requiring rapid access to large volumes of data, this 128Mbit DRAM facilitates enhanced system performance with its parallel interface, making it a perfect choice for sophisticated electronic systems in need of reliable and fast memory operations.
MT48H8M16LFB4-75 IT:K Features
This product boasts several features that make it stand out in the market. Key features include a high data capacity of 128Mbits, organized in a highly efficient parallel interface, which ensures fast data transfer speeds. The 54VFBGA package is not only space-efficient but also offers improved thermal characteristics, making it suitable for high-performance environments where durability and reliability are critical. The product operates at a temperature range of -40°C to 85°C, which ensures functionality under extreme conditions.
MT48H8M16LFB4-75 IT:K Applications
- Mobile Phones: Used in mobile phone technology to manage applications and multitasking efficiently by providing the necessary quick-access memory that enhances user experience.
- Gaming Consoles: Employs high-speed DRAM capabilities to handle complex graphics and gameplay smoothly, contributing to a richer gaming experience.
- Portable Computing Devices: Supports the demand for fast and reliable memory in laptops and tablets, ensuring quick data access and improved device responsiveness.
- Automotive Systems: Applied in advanced driver-assistance systems (ADAS) to process real-time data for features like object detection and navigation aids, enhancing both safety and performance.
- Industrial Automation: Utilized in machinery and robotics for real-time control and processing, enabling more efficient and accurate operations in industrial settings.
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