MT47R512M4EB-25E:C

Manufacturer :

Micron Technology

Product Category :

Memory

Voltage - Supply :

1.55V~1.9V

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.8mm

Terminal Position :

BOTTOM

Supply Voltage-Max (Vsup) :

1.9V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes

Supply Voltage :

1.8V

HTS Code :

8542.32.00.36

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

1.55V

Mounting Type :

Surface Mount

Base Part Number :

MT47R512M4

Pbfree Code :

yes

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Package / Case :

60-TFBGA

Memory Type :

Volatile

Operating Temperature :

0°C~85°C TC

Memory Format :

DRAM

Published :

2011

Height Seated (Max) :

1.2mm

Operating Mode :

SYNCHRONOUS

Organization :

512MX4

Lead Free :

Lead Free

Number of Terminations :

60

Terminal Finish :

TIN SILVER COPPER

Clock Frequency :

400MHz

Write Cycle Time - Word, Page :

15ns

Time@Peak Reflow Temperature-Max (s) :

30

Memory Interface :

Parallel

Width :

9mm

Memory Density :

2147483648 bit

Number of Functions :

1

JESD-30 Code :

R-PBGA-B60

Pin Count :

60

Access Time :

400ps

ECCN Code :

EAR99

Memory Size :

2Gb 512M x 4

Supply Voltage-Min (Vsup) :

1.7V

Memory Width :

4

Length :

11.5mm

Additional Feature :

AUTO/SELF REFRESH

Packaging :

Tray

Number of Ports :

1