MT47H64M8CB-5E:B
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- Mfr.Part #
- MT47H64M8CB-5E:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 40,248
- In Stock ：
- 40,248
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Package / Case :
- 60-FBGA
- Operating Supply Voltage :
- 1.8V
- Density :
- 512 Mb
- Lead Free :
- Lead Free
- Published :
- 2006
- Memory Size :
- 512Mb 64M x 8
- Organization :
- 64MX8
- Write Cycle Time - Word, Page :
- 15ns
- Memory Width :
- 8
- Voltage - Supply :
- 1.7V~1.9V
- Terminal Position :
- BOTTOM
- Address Bus Width :
- 16b
- Base Part Number :
- MT47H64M8
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Format :
- DRAM
- Length :
- 12mm
- RoHS Status :
- ROHS3 Compliant
- Sequential Burst Length :
- 48
- Standby Current-Max :
- 0.007A
- Packaging :
- Tray
- Additional Feature :
- AUTO/SELF REFRESH
- Qualification Status :
- Not Qualified
- Output Characteristics :
- 3-STATE
- Mounting Type :
- Surface Mount
- Number of Ports :
- 1
- Interleaved Burst Length :
- 48
- Clock Frequency :
- 200MHz
- Supply Voltage-Min (Vsup) :
- 1.7V
- Access Time :
- 600ps
- Terminal Finish :
- TIN SILVER COPPER
- Number of Pins :
- 60
- Refresh Cycles :
- 8192
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Functions :
- 1
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Nominal Supply Current :
- 115mA
- Supply Voltage :
- 1.8V
- Operating Temperature :
- 0°C~85°C TC
- Reach Compliance Code :
- Unknown
- Pin Count :
- 60
- Peak Reflow Temperature (Cel) :
- 260
- I/O Type :
- COMMON
- Mount :
- Surface Mount
- Height Seated (Max) :
- 1.2mm
- Terminal Pitch :
- 0.8mm
- Memory Interface :
- Parallel
- Memory Type :
- Volatile
- Number of Terminations :
- 60
- Operating Mode :
- SYNCHRONOUS
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- HTS Code :
- 8542.32.00.28
- Datasheets
- MT47H64M8CB-5E:B
Memory Micron Technology MT47H64M8CB-5E:B Overview
The Memory Micron Technology MT47H64M8CB-5E:B DRAM is a cutting-edge memory solution crafted by Micron Technology, specifically designed to meet the rigorous demands of high-performance computing environments. With a substantial storage capacity of 512Mbit and a robust parallel interface, this product ensures rapid data access and processing capabilities, making it an indispensable component in modern electronics. Its compact 60FBGA packaging not only maximizes space efficiency but also aids in enhanced thermal management, thereby ensuring reliable performance under varying operational conditions. Ideal for applications requiring high-speed data manipulation and storage, this DRAM module is engineered to deliver unmatched reliability and performance.
MT47H64M8CB-5E:B Features
This DRAM module boasts several key features that make it a preferred choice for sophisticated electronic systems:
- 512Mbit Density: Provides ample space for data-intensive applications.
- Parallel Interface: Ensures fast and efficient data transfer rates.
- 60FBGA Package: Offers a compact footprint and superior thermal properties.
- High Data Bandwidth: Facilitates enhanced processing speeds suitable for advanced computing tasks.
MT47H64M8CB-5E:B Applications
- Consumer Electronics: Utilized in devices such as smartphones and tablets to manage multiple applications simultaneously without compromising performance.
- Computing: Integral for PCs and servers where high-speed data processing and large memory bandwidth are necessary for efficient operations.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) to quickly process and store information critical for vehicle safety.
- Networking: Essential in routers and switches to handle large volumes of data traffic, ensuring smooth and reliable network connectivity.
- Industrial Applications: Used in machinery and control systems that require robust data management capabilities to ensure operational accuracy and reliability.
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