MT47H64M8CB-37E:B

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Pitch :

0.8mm

Clock Frequency :

267MHz

Lead Free :

Lead Free

Supply Voltage-Min (Vsup) :

1.7V

Write Cycle Time - Word, Page :

15ns

Length :

12mm

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

Reach Compliance Code :

not_compliant

Output Characteristics :

3-STATE

Operating Temperature :

0°C~85°C TC

Terminal Position :

BOTTOM

Density :

512 Mb

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification Status :

Not Qualified

Address Bus Width :

16b

Sequential Burst Length :

48

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Memory Size :

512Mb 64M x 8

Operating Mode :

SYNCHRONOUS

Memory Format :

DRAM

Operating Supply Voltage :

1.8V

HTS Code :

8542.32.00.28

Supply Voltage-Max (Vsup) :

1.9V

Access Time :

500ps

Mount :

Surface Mount

Nominal Supply Current :

145mA

Number of Pins :

60

Pin Count :

60

Base Part Number :

MT47H64M8

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

60-FBGA

Number of Terminations :

60

Published :

2006

Refresh Cycles :

8192

Moisture Sensitivity Level (MSL) :

5 (48 Hours)

Supply Voltage :

1.8V

Voltage - Supply :

1.7V~1.9V

Packaging :

Tray

I/O Type :

COMMON

Number of Ports :

1

Number of Functions :

1

Interleaved Burst Length :

48

Organization :

64MX8

Height Seated (Max) :

1.2mm

Memory Width :

8

JESD-609 Code :

e1

Memory Interface :

Parallel

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Standby Current-Max :

0.007A