MT47H64M8CB-3:B
- Mfr.Part #
- MT47H64M8CB-3:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 44,985
- In Stock :
- 44,985
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup) :
- 1.7V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Functions :
- 1
- Base Part Number :
- MT47H64M8
- Nominal Supply Current :
- 180mA
- Memory Type :
- Volatile
- Memory Width :
- 8
- Package / Case :
- 60-FBGA
- Lead Free :
- Lead Free
- Terminal Finish :
- TIN SILVER COPPER
- Number of Ports :
- 1
- Pin Count :
- 60
- JESD-609 Code :
- e1
- Length :
- 12mm
- Mount :
- Surface Mount
- Standby Current-Max :
- 0.007A
- Height Seated (Max) :
- 1.2mm
- Interleaved Burst Length :
- 48
- Number of Terminations :
- 60
- Packaging :
- Tray
- Output Characteristics :
- 3-STATE
- Organization :
- 64MX8
- Terminal Position :
- BOTTOM
- Address Bus Width :
- 16b
- Voltage - Supply :
- 1.7V~1.9V
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Supply Voltage :
- 1.8V
- Operating Supply Voltage :
- 1.8V
- Qualification Status :
- Not Qualified
- Published :
- 2006
- HTS Code :
- 8542.32.00.28
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 0°C~85°C TC
- Supply Voltage-Max (Vsup) :
- 1.9V
- Sequential Burst Length :
- 48
- Memory Size :
- 512Mb 64M x 8
- Clock Frequency :
- 333MHz
- Memory Format :
- DRAM
- I/O Type :
- COMMON
- Terminal Pitch :
- 0.8mm
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Write Cycle Time - Word, Page :
- 15ns
- Mounting Type :
- Surface Mount
- Refresh Cycles :
- 8192
- Access Time :
- 450ps
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Density :
- 512 Mb
- Number of Pins :
- 60
- Datasheets
- MT47H64M8CB-3:B

Memory Micron Technology MT47H64M8CB-3:B Overview
The Memory Micron Technology MT47H64M8CB-3:B IC DRAM is a high-performance 512Mbit DRAM chip housed in a compact 60FBGA package, specifically designed to meet the demanding requirements of advanced computing systems. Offering a blend of speed and reliability, this memory chip is engineered by Micron Technology, a leader in memory and storage solutions. It ensures efficient data throughput and enhanced memory bandwidth, making it an ideal choice for applications requiring high-speed data processing and significant storage capacity.
MT47H64M8CB-3:B Features
This dynamic RAM component features a robust parallel interface, facilitating rapid data transfer rates and supporting the intensive bandwidth requirements of modern applications. With a configuration of 64 Meg x 8 bits, it provides ample space and speed for complex processing tasks. The 60FBGA packaging not only minimizes the physical footprint but also enhances the thermal management and electrical integrity, crucial for maintaining system stability under load.
MT47H64M8CB-3:B Applications
- Automotive Navigation Systems: Utilized for its fast data access speeds and reliability, essential for real-time system responsiveness in vehicle navigation and multimedia streaming.
- Enterprise Networking Equipment: Supports the high throughput and storage demands of network routers, switches, and other infrastructure, ensuring efficient data flow and system performance.
- High-Performance Computing (HPC): Serves as a critical component in supercomputers and data centers requiring high bandwidth memory for processing large datasets and performing complex calculations.
- Consumer Electronics: Embedded in devices such as high-definition televisions and gaming consoles, where high-speed memory is crucial for enhanced graphic displays and user interface responsiveness.
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