MT47H64M8CB-25:B

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Finish :

TIN SILVER COPPER

Published :

2008

Memory Format :

DRAM

Standby Current-Max :

0.007A

Memory Type :

Volatile

Organization :

64MX8

Pin Count :

60

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tray

Package / Case :

60-FBGA

Supply Voltage :

1.8V

Memory Width :

8

Interleaved Burst Length :

48

Write Cycle Time - Word, Page :

15ns

Height Seated (Max) :

1.2mm

Access Time :

400ps

Supply Current-Max :

0.3mA

Memory Density :

536870912 bit

Qualification Status :

Not Qualified

Memory Interface :

Parallel

JESD-30 Code :

R-PBGA-B60

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Memory Size :

512Mb 64M x 8

I/O Type :

COMMON

Voltage - Supply :

1.7V~1.9V

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.8mm

Additional Feature :

AUTO/SELF REFRESH

Surface Mount :

yes

Width :

10mm

Supply Voltage-Max (Vsup) :

1.9V

HTS Code :

8542.32.00.28

Supply Voltage-Min (Vsup) :

1.7V

Number of Ports :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

0°C~85°C TC

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MT47H64M8

Clock Frequency :

400MHz

Length :

12mm

Number of Terminations :

60

Sequential Burst Length :

48

Operating Mode :

SYNCHRONOUS

Output Characteristics :

3-STATE

Power Supplies :

1.8V

Refresh Cycles :

8192

Number of Functions :

1

JESD-609 Code :

e1