MT47H64M16HR-3 IT:G

Manufacturer :

Micron Technology

Product Category :

Memory

I/O Type :

COMMON

Power Supplies :

1.8V

Operating Temperature :

-40°C~95°C TC

Supply Voltage-Max (Vsup) :

1.9V

Number of Functions :

1

Terminal Pitch :

0.8mm

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

1.7V~1.9V

Memory Format :

DRAM

Memory Size :

1Gb 64M x 16

Supply Voltage :

1.8V

Access Time :

450ps

Sequential Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

15ns

JESD-30 Code :

R-PBGA-B84

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Number of Ports :

1

Additional Feature :

AUTO/SELF REFRESH

HTS Code :

8542.32.00.32

Packaging :

Tray

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Density :

1073741824 bit

Refresh Cycles :

8192

Height Seated (Max) :

1.2mm

Organization :

64MX16

Length :

12.5mm

Published :

2010

Supply Current-Max :

0.35mA

JESD-609 Code :

e1

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Output Characteristics :

3-STATE

Base Part Number :

MT47H64M16

Memory Width :

16

Number of Terminations :

84

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Pin Count :

84

Qualification Status :

Not Qualified

Package / Case :

84-TFBGA

Width :

8mm

Memory Interface :

Parallel

Memory Type :

Volatile

Standby Current-Max :

0.007A

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Clock Frequency :

333MHz