MT47H512M4EB-3:C

Manufacturer :

Micron Technology

Product Category :

Memory

Lead Free :

Lead Free

Supply Voltage-Max (Vsup) :

1.9V

Write Cycle Time - Word, Page :

15ns

Terminal Finish :

TIN SILVER COPPER

Height Seated (Max) :

1.2mm

Number of Functions :

1

Clock Frequency :

333MHz

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

2Gb 512M x 4

Base Part Number :

MT47H512M4

Standby Current-Max :

0.012A

Radiation Hardening :

No

Pbfree Code :

yes

Supply Current-Max :

0.225mA

Published :

2012

Interleaved Burst Length :

48

Number of Pins :

60

Refresh Cycles :

8192

Voltage - Supply :

1.7V~1.9V

Number of Ports :

1

Memory Type :

Volatile

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Operating Supply Voltage :

1.8V

Density :

2 GB

Access Time :

450ps

Operating Temperature :

0°C~85°C TC

Memory Interface :

Parallel

Additional Feature :

AUTO/SELF REFRESH

ECCN Code :

EAR99

Package / Case :

60-TFBGA

Output Characteristics :

3-STATE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

60

Sequential Burst Length :

48

Packaging :

Tray

Memory Width :

4

I/O Type :

COMMON

Supply Voltage :

1.8V

Length :

11.5mm

HTS Code :

8542.32.00.36

Peak Reflow Temperature (Cel) :

260

Pin Count :

60

Memory Format :

DRAM

Terminal Position :

BOTTOM

Data Bus Width :

4B

Address Bus Width :

18b

Max Frequency :

667MHz

Surface Mount :

yes

Organization :

512MX4

Terminal Pitch :

0.8mm

JESD-609 Code :

e1

Supply Voltage-Min (Vsup) :

1.7V