MT47H32M16CC-37E:B
- Mfr.Part #
- MT47H32M16CC-37E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 1,277
- In Stock :
- 1,277
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 0°C~85°C TC
- Memory Size :
- 512Mb 32M x 16
- Memory Interface :
- Parallel
- Clock Frequency :
- 267MHz
- Additional Feature :
- AUTO/SELF REFRESH
- Standby Current-Max :
- 0.007A
- Output Characteristics :
- 3-STATE
- Pin Count :
- 84
- Access Time :
- 500ps
- Base Part Number :
- MT47H32M16
- Package / Case :
- 84-TFBGA
- Supply Voltage :
- 1.8V
- Reach Compliance Code :
- not_compliant
- Memory Width :
- 16
- Number of Ports :
- 1
- Address Bus Width :
- 15b
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Sequential Burst Length :
- 48
- Operating Mode :
- SYNCHRONOUS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Density :
- 512 Mb
- RoHS Status :
- ROHS3 Compliant
- Refresh Cycles :
- 8192
- Number of Terminations :
- 84
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Length :
- 12.5mm
- Write Cycle Time - Word, Page :
- 15ns
- Published :
- 2006
- Number of Functions :
- 1
- JESD-609 Code :
- e1
- Interleaved Burst Length :
- 48
- Terminal Pitch :
- 0.8mm
- Number of Pins :
- 84
- HTS Code :
- 8542.32.00.28
- Supply Voltage-Max (Vsup) :
- 1.9V
- Organization :
- 32MX16
- Height Seated (Max) :
- 1.2mm
- Voltage - Supply :
- 1.7V~1.9V
- Packaging :
- Tray
- Supply Voltage-Min (Vsup) :
- 1.7V
- Operating Supply Voltage :
- 1.8V
- Memory Type :
- Volatile
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Supply Current :
- 205mA
- I/O Type :
- COMMON
- ECCN Code :
- EAR99
- Memory Format :
- DRAM
- Datasheets
- MT47H32M16CC-37E:B
MT47H32M16CC-37E:B Documents

Memory Micron Technology MT47H32M16CC-37E:B Overview
The Memory Micron Technology MT47H32M16CC-37E:B is a high-performance Integrated Circuit (IC) DRAM featuring a robust storage capacity of 512Mbit arranged in a parallel configuration. Housed in a compact 84FBGA package, this product leverages Micron Technology's advanced manufacturing techniques to offer exceptional reliability and speed, making it an ideal solution for applications requiring intensive bandwidth and low latency. Its design is specifically tailored to meet the rigorous demands of contemporary digital systems, offering both durability and high-grade data integrity.
MT47H32M16CC-37E:B Features
This DRAM IC excels in its class with several distinctive features:
- High-density memory capacity of 512Mbit allows for efficient data management and storage.
- Parallel interface ensures rapid data transfer rates that are essential for high-speed computing tasks.
- Compact 84FBGA packaging makes it suitable for space-constrained applications without sacrificing performance.
- Built using Micron’s cutting-edge technology, which provides enhanced reliability and power efficiency.
MT47H32M16CC-37E:B Applications
- Smartphones and Tablets: Utilized for its high-speed data processing capabilities which enhance multitasking and improve user experience.
- Computing: Integral in PCs and servers where large volumes of data are processed and high memory bandwidth is required.
- Automotive: Supports advanced automotive systems including infotainment and driver assist technologies which demand robust and reliable memory solutions.
- Industrial Applications: Ideal for use in complex industrial machines and systems that require high reliability and prolonged operational life.
- Networking: Critical for high-performance networking equipment, aiding in efficient data flow and storage within network infrastructure.
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