MT47H32M16CC-37E:B
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- Mfr.Part #
- MT47H32M16CC-37E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 1,277
- In Stock ：
- 1,277
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Mounting Type :
- Surface Mount
- Sequential Burst Length :
- 48
- Number of Functions :
- 1
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Size :
- 512Mb 32M x 16
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Clock Frequency :
- 267MHz
- Package / Case :
- 84-TFBGA
- I/O Type :
- COMMON
- Number of Pins :
- 84
- Memory Interface :
- Parallel
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e1
- Height Seated (Max) :
- 1.2mm
- Mount :
- Surface Mount
- Packaging :
- Tray
- Number of Terminations :
- 84
- Write Cycle Time - Word, Page :
- 15ns
- Organization :
- 32MX16
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Supply :
- 1.7V~1.9V
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Format :
- DRAM
- Refresh Cycles :
- 8192
- Operating Temperature :
- 0°C~85°C TC
- Density :
- 512 Mb
- Memory Type :
- Volatile
- Standby Current-Max :
- 0.007A
- HTS Code :
- 8542.32.00.28
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Supply Voltage :
- 1.8V
- Length :
- 12.5mm
- Operating Mode :
- SYNCHRONOUS
- Nominal Supply Current :
- 205mA
- Terminal Pitch :
- 0.8mm
- Pin Count :
- 84
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Output Characteristics :
- 3-STATE
- Number of Ports :
- 1
- Interleaved Burst Length :
- 48
- Memory Width :
- 16
- Supply Voltage-Min (Vsup) :
- 1.7V
- Address Bus Width :
- 15b
- Published :
- 2006
- Base Part Number :
- MT47H32M16
- Access Time :
- 500ps
- Operating Supply Voltage :
- 1.8V
- Terminal Position :
- BOTTOM
- Datasheets
- MT47H32M16CC-37E:B
Memory Micron Technology MT47H32M16CC-37E:B Overview
The Memory Micron Technology MT47H32M16CC-37E:B is a high-performance Integrated Circuit (IC) DRAM featuring a robust storage capacity of 512Mbit arranged in a parallel configuration. Housed in a compact 84FBGA package, this product leverages Micron Technology's advanced manufacturing techniques to offer exceptional reliability and speed, making it an ideal solution for applications requiring intensive bandwidth and low latency. Its design is specifically tailored to meet the rigorous demands of contemporary digital systems, offering both durability and high-grade data integrity.
MT47H32M16CC-37E:B Features
This DRAM IC excels in its class with several distinctive features:
- High-density memory capacity of 512Mbit allows for efficient data management and storage.
- Parallel interface ensures rapid data transfer rates that are essential for high-speed computing tasks.
- Compact 84FBGA packaging makes it suitable for space-constrained applications without sacrificing performance.
- Built using Micron’s cutting-edge technology, which provides enhanced reliability and power efficiency.
MT47H32M16CC-37E:B Applications
- Smartphones and Tablets: Utilized for its high-speed data processing capabilities which enhance multitasking and improve user experience.
- Computing: Integral in PCs and servers where large volumes of data are processed and high memory bandwidth is required.
- Automotive: Supports advanced automotive systems including infotainment and driver assist technologies which demand robust and reliable memory solutions.
- Industrial Applications: Ideal for use in complex industrial machines and systems that require high reliability and prolonged operational life.
- Networking: Critical for high-performance networking equipment, aiding in efficient data flow and storage within network infrastructure.
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