MT47H32M16CC-3:B
- Mfr.Part #
- MT47H32M16CC-3:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 19,001
- In Stock :
- 19,001
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 0°C~85°C TC
- Output Characteristics :
- 3-STATE
- Density :
- 512 Mb
- Published :
- 2006
- Number of Pins :
- 84
- Supply Voltage :
- 1.8V
- Height Seated (Max) :
- 1.2mm
- Write Cycle Time - Word, Page :
- 15ns
- Lead Free :
- Lead Free
- Memory Size :
- 512Mb 32M x 16
- Voltage - Supply :
- 1.7V~1.9V
- Memory Width :
- 16
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Functions :
- 1
- Memory Interface :
- Parallel
- JESD-609 Code :
- e1
- Organization :
- 32MX16
- Operating Supply Voltage :
- 1.8V
- Memory Format :
- DRAM
- Length :
- 12.5mm
- Supply Voltage-Max (Vsup) :
- 1.9V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Number of Ports :
- 1
- Packaging :
- Tray
- Mount :
- Surface Mount
- I/O Type :
- COMMON
- Data Bus Width :
- 16b
- Standby Current-Max :
- 0.007A
- Number of Terminations :
- 84
- Package / Case :
- 84-TFBGA
- Base Part Number :
- MT47H32M16
- Clock Frequency :
- 333MHz
- Access Time :
- 450ps
- Memory Type :
- Volatile
- Pin Count :
- 84
- HTS Code :
- 8542.32.00.28
- Address Bus Width :
- 15b
- Interleaved Burst Length :
- 48
- ECCN Code :
- EAR99
- Supply Voltage-Min (Vsup) :
- 1.7V
- Nominal Supply Current :
- 250mA
- Refresh Cycles :
- 8192
- Terminal Position :
- BOTTOM
- Sequential Burst Length :
- 48
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Terminal Pitch :
- 0.8mm
- Radiation Hardening :
- No
- Additional Feature :
- AUTO/SELF REFRESH
- Datasheets
- MT47H32M16CC-3:B

Memory Micron Technology MT47H32M16CC-3:B Overview
The Memory Micron Technology MT47H32M16CC-3:B is a high-performance IC DRAM featuring a 512Mbit capacity and a compact 84FBGA package. Designed for applications requiring dense memory storage and fast data retrieval, this product harnesses Micron's cutting-edge technology to deliver exceptional speed and reliability. Ideal for advanced computing and high-speed processing tasks, the Memory Micron Technology MT47H32M16CC-3:B ensures optimal performance in demanding environments, making it a prime choice for B2B clients aiming to leverage robust memory solutions in their products.
MT47H32M16CC-3:B Features
This 512Mbit DRAM from Micron Technology boasts several key features that make it a competitive choice in the market:
- High Storage Capacity: With 512Mbit of memory, it offers ample space for demanding applications.
- Parallel Interface: Facilitates rapid data transfer rates which are crucial for high-performance computing tasks.
- Compact Form Factor: The 84FBGA package ensures a minimal footprint, ideal for devices where space is at a premium.
- Reliable Performance: Engineered by Micron Technology, known for its innovation and quality in memory products.
MT47H32M16CC-3:B Applications
- Smartphones and Tablets: Utilized for managing the extensive memory requirements and multitasking environments, ensuring smooth operation and user experience.
- Personal Computers: Improves system responsiveness and allows for efficient handling of large-scale software applications.
- Embedded Systems: Provides the necessary memory backbone for embedded systems in automotive and industrial applications, enhancing performance and reliability.
- Gaming Consoles: Ensures fast loading times and real-time game data processing, which is critical for modern gaming experiences.
- Networking Equipment: Supports advanced networking hardware by facilitating quick data exchange and buffer management, crucial for high-speed network environments.
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