MT47H256M4BT-5E:A

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Width :

4

Data Bus Width :

4B

Density :

1 Gb

Lead Free :

Lead Free

Operating Supply Voltage :

1.8V

Packaging :

Box

Organization :

256MX4

Terminal Pitch :

0.8mm

Sequential Burst Length :

48

Write Cycle Time - Word, Page :

15ns

Supply Voltage :

1.8V

Operating Temperature :

0°C~85°C TC

Length :

19mm

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

1.7V~1.9V

Address Bus Width :

17b

Nominal Supply Current :

110mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Type :

Volatile

HTS Code :

8542.32.00.32

Supply Voltage-Min (Vsup) :

1.7V

Output Characteristics :

3-STATE

Base Part Number :

MT47H256M4

Memory Size :

1Gb 256M x 4

Published :

2006

Factory Lead Time :

16 Weeks

Number of Terminations :

92

Supply Voltage-Max (Vsup) :

1.9V

Radiation Hardening :

No

Number of Pins :

92

Mount :

Surface Mount

Mounting Type :

Surface Mount

Interleaved Burst Length :

48

Pin Count :

92

Number of Functions :

1

ECCN Code :

EAR99

Package / Case :

92-VFBGA

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

5 (48 Hours)

Peak Reflow Temperature (Cel) :

260

Memory Format :

DRAM

Terminal Position :

BOTTOM

Additional Feature :

AUTO/SELF REFRESH

Clock Frequency :

200MHz

Memory Interface :

Parallel

Number of Ports :

1

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Access Time :

600ps