MT47H16M16BG-3E:B
- Mfr.Part #
- MT47H16M16BG-3E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-FBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 84FBGA
- Stock
- 29,617
- In Stock :
- 29,617
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Standby Current-Max :
- 0.005A
- Pin Count :
- 84
- Sequential Burst Length :
- 48
- Organization :
- 16MX16
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- AUTO/SELF REFRESH
- Lead Free :
- Lead Free
- Number of Pins :
- 84
- Refresh Cycles :
- 8192
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 84
- Number of Ports :
- 1
- Access Time :
- 450ps
- Output Characteristics :
- 3-STATE
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Pitch :
- 0.8mm
- Nominal Supply Current :
- 215mA
- Base Part Number :
- MT47H16M16
- ECCN Code :
- EAR99
- Clock Frequency :
- 333MHz
- Memory Width :
- 16
- Voltage - Supply :
- 1.7V~1.9V
- Supply Voltage :
- 1.8V
- Height Seated (Max) :
- 1.2mm
- Memory Size :
- 256Mb 16M x 16
- Data Bus Width :
- 16b
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Radiation Hardening :
- No
- Memory Type :
- Volatile
- Number of Functions :
- 1
- Operating Supply Voltage :
- 1.8V
- Density :
- 256 Mb
- Terminal Finish :
- TIN SILVER COPPER
- Published :
- 2005
- Operating Temperature :
- 0°C~85°C TC
- Memory Format :
- DRAM
- Address Bus Width :
- 15b
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Write Cycle Time - Word, Page :
- 15ns
- HTS Code :
- 8542.32.00.24
- I/O Type :
- COMMON
- Interleaved Burst Length :
- 48
- Supply Voltage-Max (Vsup) :
- 1.9V
- Supply Voltage-Min (Vsup) :
- 1.7V
- Length :
- 14mm
- Mount :
- Surface Mount
- Package / Case :
- 84-FBGA
- Memory Interface :
- Parallel
- Packaging :
- Box
- Datasheets
- MT47H16M16BG-3E:B

Memory Micron Technology MT47H16M16BG-3E:B Overview
The Memory Micron Technology MT47H16M16BG-3E:B is a high-performance IC DRAM featuring a 256Mbit capacity and an efficient parallel interface, encapsulated in an 84-pin FBGA (Fine-Pitch Ball Grid Array) package. This product is designed to meet the high-speed operational requirements of advanced computing systems, offering reliable data storage and rapid access capabilities. Its robust architecture enables enhanced durability and optimum functionality, making it an ideal choice for manufacturers seeking dependable memory solutions for their high-end applications. The integration of advanced technology by Micron Technology ensures that this memory component delivers superior performance, scalability, and power efficiency, making it particularly suitable for bulk purchasing by B2B customers focused on assembling high-performance computing devices.
MT47H16M16BG-3E:B Features
The MT47H16M16BG-3E:B boasts several key features that distinguish it in the market:
- High Capacity: 256Mbit of dynamic RAM accommodates substantial data volumes.
- Parallel Interface: Facilitates quick and efficient data transfer rates.
- Compact 84FBGA Packaging: Ensures a minimal footprint on the system board, ideal for compact system designs.
- High Data Reliability: Manufactured by Micron Technology, known for its rigorous quality control.
MT47H16M16BG-3E:B Applications
- Computing Systems: Serves as primary DRAM in servers and high-performance computers, facilitating fast processing and multitasking capabilities.
- Networking Hardware: Used in routers and switches to manage data flow efficiently across networks.
- Consumer Electronics: Ideal for use in devices such as gaming consoles and smart TVs, enhancing graphical and processing power.
- Automotive Applications: Supports advanced automotive systems, including infotainment and navigation systems, requiring rapid data access and processing.
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