MT46V8M16TG-75:D

Manufacturer :

Micron Technology

Product Category :

Memory

Output Characteristics :

3-STATE

JESD-609 Code :

e0

Operating Mode :

SYNCHRONOUS

Length :

22.22mm

Memory Format :

DRAM

Operating Temperature :

0°C~70°C TA

Number of Pins :

66

Write Cycle Time - Word, Page :

15ns

Additional Feature :

AUTO/SELF REFRESH

I/O Type :

COMMON

Memory Type :

Volatile

Base Part Number :

MT46V8M16

Density :

128 Mb

Standby Current-Max :

0.003A

RoHS Status :

Non-RoHS Compliant

Number of Ports :

1

Address Bus Width :

14b

Supply Voltage :

2.5V

Packaging :

Tray

Number of Terminations :

66

Supply Voltage-Min (Vsup) :

2.3V

Memory Size :

128Mb 8M x 16

Qualification Status :

Not Qualified

Nominal Supply Current :

140mA

Operating Supply Voltage :

2.5V

Interleaved Burst Length :

248

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Sequential Burst Length :

248

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2007

Access Time :

750ps

Memory Interface :

Parallel

Terminal Finish :

Tin/Lead (Sn/Pb)

Lead Free :

Contains Lead

Organization :

8MX16

ECCN Code :

EAR99

Pin Count :

66

Peak Reflow Temperature (Cel) :

235

Number of Functions :

1

HTS Code :

8542.32.00.02

Reach Compliance Code :

not_compliant

Voltage - Supply :

2.3V~2.7V

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Memory Width :

16

Refresh Cycles :

4096

Supply Voltage-Max (Vsup) :

2.7V

Height Seated (Max) :

1.2mm

Clock Frequency :

133MHz

Terminal Pitch :

0.65mm

Terminal Position :

Dual