MT46V64M8TG-75:D

Manufacturer :

Micron Technology

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-G66

Refresh Cycles :

8192

Memory Type :

Volatile

Terminal Position :

Dual

Qualification Status :

Not Qualified

HTS Code :

8542.32.00.28

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Supply Voltage-Max (Vsup) :

2.7V

Moisture Sensitivity Level (MSL) :

4 (72 Hours)

Operating Temperature :

0°C~70°C TA

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage :

2.5V

Terminal Pitch :

0.65mm

Write Cycle Time - Word, Page :

15ns

Organization :

64MX8

RoHS Status :

Non-RoHS Compliant

Published :

2007

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tray

Interleaved Burst Length :

248

Memory Format :

DRAM

Pin Count :

66

Number of Ports :

1

Height Seated (Max) :

1.2mm

Reach Compliance Code :

not_compliant

Output Characteristics :

3-STATE

Surface Mount :

yes

Access Time :

750ps

JESD-609 Code :

e0

Voltage - Supply :

2.3V~2.7V

Memory Density :

536870912 bit

Sequential Burst Length :

248

ECCN Code :

EAR99

Supply Voltage-Min (Vsup) :

2.3V

Length :

22.22mm

Memory Size :

512Mb 64M x 8

Operating Supply Voltage :

2.5V

Clock Frequency :

133MHz

Lead Free :

Contains Lead

Number of Functions :

1

Peak Reflow Temperature (Cel) :

235

Width :

10.16mm

Memory Width :

8

Number of Terminations :

66

Memory Interface :

Parallel

Base Part Number :

MT46V64M8

I/O Type :

COMMON

Standby Current-Max :

0.005A

Operating Mode :

SYNCHRONOUS

Mounting Type :

Surface Mount