MT46V64M8TG-5B:J

Manufacturer :

Micron Technology

Product Category :

Memory

Lead Free :

Contains Lead

Memory Format :

DRAM

I/O Type :

COMMON

Memory Width :

8

Data Bus Width :

8B

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Length :

22.22mm

Memory Interface :

Parallel

Additional Feature :

AUTO/SELF REFRESH

ECCN Code :

EAR99

Output Characteristics :

3-STATE

Memory Type :

Volatile

Pin Count :

66

Packaging :

Bulk

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

200MHz

Height Seated (Max) :

1.2mm

Supply Voltage-Min (Vsup) :

2.5V

Density :

512 Mb

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

2.7V

Radiation Hardening :

No

Access Time :

700ps

Number of Ports :

1

HTS Code :

8542.32.00.28

Number of Terminations :

66

Published :

2011

Number of Functions :

1

RoHS Status :

Non-RoHS Compliant

Address Bus Width :

15b

Supply Current-Max :

0.23mA

Max Frequency :

400MHz

Refresh Cycles :

8192

Operating Supply Voltage :

2.6V

Standby Current-Max :

0.005A

Memory Size :

512Mb 64M x 8

Voltage - Supply :

2.5V~2.7V

Supply Voltage :

2.6V

Operating Temperature :

0°C~70°C TA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

66

Terminal Position :

Dual

Surface Mount :

yes

Sequential Burst Length :

248

Organization :

64MX8

Interleaved Burst Length :

248

Terminal Pitch :

0.65mm