MT46V64M8P-6T:D

Manufacturer :

Micron Technology

Product Category :

Memory

HTS Code :

8542.32.00.28

Number of Functions :

1

Memory Width :

8

Memory Type :

Volatile

Terminal Pitch :

0.65mm

Memory Size :

512Mb 64M x 8

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Supply Voltage-Max (Vsup) :

2.7V

Write Cycle Time - Word, Page :

15ns

Length :

22.22mm

RoHS Status :

ROHS3 Compliant

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage :

2.5V

Surface Mount :

yes

Voltage - Supply :

2.3V~2.7V

Operating Supply Voltage :

2.5V

Memory Density :

536870912 bit

Standby Current-Max :

0.005A

Memory Interface :

Parallel

Qualification Status :

Not Qualified

Sequential Burst Length :

248

Memory Format :

DRAM

Organization :

64MX8

Width :

10.16mm

Refresh Cycles :

8192

Supply Current-Max :

0.405mA

Height Seated (Max) :

1.2mm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tray

Operating Temperature :

0°C~70°C TA

Lead Free :

Lead Free

Clock Frequency :

167MHz

Number of Ports :

1

Published :

2007

I/O Type :

COMMON

Terminal Position :

Dual

Base Part Number :

MT46V64M8

Terminal Finish :

Matte Tin (Sn)

Access Time :

700ps

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G66

Output Characteristics :

3-STATE

Number of Terminations :

66

Moisture Sensitivity Level (MSL) :

4 (72 Hours)

Pin Count :

66

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Supply Voltage-Min (Vsup) :

2.3V

Interleaved Burst Length :

248

JESD-609 Code :

e3