MT46V64M8CY-5B:J

Manufacturer :

Micron Technology

Product Category :

Memory

Supply Voltage-Min (Vsup) :

2.5V

HTS Code :

8542.32.00.28

Memory Type :

Volatile

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Memory Format :

DRAM

Packaging :

Bulk

Memory Size :

512Mb 64M x 8

Nominal Supply Current :

230mA

Additional Feature :

AUTO/SELF REFRESH

Number of Functions :

1

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Ports :

1

Density :

512 Mb

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Operating Temperature :

0°C~70°C TA

Voltage - Supply :

2.5V~2.7V

Lead Free :

Lead Free

Terminal Pitch :

1mm

Contact Plating :

Copper, Silver, Tin

Sequential Burst Length :

248

Supply Voltage-Max (Vsup) :

2.7V

Published :

2011

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

200MHz

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Number of Pins :

60

I/O Type :

COMMON

Base Part Number :

MT46V64M8

Package / Case :

60-TFBGA

Access Time :

700ps

Interleaved Burst Length :

248

Number of Terminations :

60

Max Frequency :

400MHz

Address Bus Width :

15b

ECCN Code :

EAR99

Standby Current-Max :

0.005A

Operating Supply Voltage :

2.6V

Length :

12.5mm

Memory Width :

8

Data Bus Width :

8B

Factory Lead Time :

4 Weeks

Pin Count :

60

Terminal Position :

BOTTOM

Organization :

64MX8

RoHS Status :

ROHS3 Compliant

Output Characteristics :

3-STATE

Mount :

Surface Mount

Radiation Hardening :

No

Supply Voltage :

2.6V