MT46V256M4P-75:A
- Mfr.Part #
- MT46V256M4P-75:A
- Manufacturer
- Micron Technology
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 66TSOP
- Stock
- 13,650
- In Stock :
- 13,650
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Interleaved Burst Length :
- 248
- Mounting Type :
- Surface Mount
- Refresh Cycles :
- 8192
- Write Cycle Time - Word, Page :
- 15ns
- Supply Voltage :
- 2.5V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2007
- Data Bus Width :
- 4B
- Memory Size :
- 1Gb 256M x 4
- Memory Type :
- Volatile
- HTS Code :
- 8542.32.00.32
- Number of Functions :
- 1
- Packaging :
- Tray
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Memory Interface :
- Parallel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height Seated (Max) :
- 1.2mm
- Operating Supply Voltage :
- 2.5V
- Mount :
- Surface Mount
- Memory Width :
- 4
- Sequential Burst Length :
- 248
- Radiation Hardening :
- No
- Operating Temperature :
- 0°C~70°C TA
- Standby Current-Max :
- 0.01A
- Address Bus Width :
- 16b
- Nominal Supply Current :
- 210mA
- Voltage - Supply :
- 2.3V~2.7V
- I/O Type :
- COMMON
- Number of Pins :
- 66
- Length :
- 22.22mm
- Number of Terminations :
- 66
- ECCN Code :
- EAR99
- Supply Voltage-Min (Vsup) :
- 2.3V
- Lead Free :
- Lead Free
- Access Time :
- 750ps
- Organization :
- 256MX4
- Density :
- 1 Gb
- RoHS Status :
- ROHS3 Compliant
- Output Characteristics :
- 3-STATE
- Pin Count :
- 66
- Pbfree Code :
- yes
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Format :
- DRAM
- Additional Feature :
- AUTO/SELF REFRESH
- JESD-609 Code :
- e3
- Clock Frequency :
- 133MHz
- Number of Ports :
- 1
- Terminal Pitch :
- 0.65mm
- Base Part Number :
- MT46V256M4
- Supply Voltage-Max (Vsup) :
- 2.7V
- Datasheets
- MT46V256M4P-75:A
MT46V256M4P-75:A Documents

Memory Micron Technology MT46V256M4P-75:A Overview
The Memory Micron Technology MT46V256M4P-75:A IC DRAM represents a high-performance, 1Gbit DRAM chip designed for parallel interfacing. Manufactured by Micron Technology, this product offers a substantial memory solution, encapsulated in a 66-pin TSOP package. Its robust design and high-speed data transfer capabilities make it ideal for applications requiring substantial memory in a compact form factor. The utilization of advanced technology in manufacturing this DRAM ensures reliability and performance, ideally suited for B2B customers looking to integrate high-quality memory components into their systems. This memory module is perfect for companies needing high-density and rapid-access memory architectures, enhancing overall system efficiency.
MT46V256M4P-75:A Features
This 1Gbit DRAM module from Micron Technology is packaged in a slim 66TSOP form, allowing for efficient space utilization in complex electronic assemblies. Key features include a high data bandwidth and low latency, suitable for advanced computing needs. It is designed to operate at a standard temperature, ensuring consistent performance across a variety of environments. The product's durability and power efficiency make it an optimal choice for demanding applications.
MT46V256M4P-75:A Applications
- High-Performance Computing: Ideal for server farms and data centers, where large amounts of data require rapid access and processing, enhancing overall computational speed and reliability.
- Consumer Electronics: Used in devices such as high-end gaming consoles and advanced personal computers, offering fast memory access to handle intensive graphics and processing tasks.
- Telecommunications: Critical for telecommunications equipment, supporting the high-speed data transfer and storage necessary for network operations and connectivity.
- Automotive Systems: Applicable in advanced driver-assistance systems (ADAS) where quick data processing is crucial for real-time decision making and vehicle safety.
- Industrial Automation: Enhances the capability of automated systems in factories, improving machine response times and data handling for better operational efficiency.
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