MT46V128M4P-6T:D

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Size :

512Mb 128M x 4

Memory Width :

4

Supply Voltage-Min (Vsup) :

2.3V

Sequential Burst Length :

248

Supply Voltage :

2.5V

Supply Voltage-Max (Vsup) :

2.7V

Supply Current-Max :

0.405mA

Write Cycle Time - Word, Page :

15ns

Mounting Type :

Surface Mount

Memory Density :

536870912 bit

Terminal Finish :

Matte Tin (Sn)

Memory Interface :

Parallel

Voltage - Supply :

2.3V~2.7V

Access Time :

700ps

Length :

22.22mm

Memory Type :

Volatile

Peak Reflow Temperature (Cel) :

260

Pin Count :

66

Additional Feature :

AUTO/SELF REFRESH

Operating Supply Voltage :

2.5V

Refresh Cycles :

8192

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G66

I/O Type :

COMMON

Memory Format :

DRAM

Lead Free :

Lead Free

Organization :

128MX4

Published :

2007

HTS Code :

8542.32.00.28

Operating Temperature :

0°C~70°C TA

Base Part Number :

MT46V128M4

Packaging :

Tray

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Terminal Pitch :

0.65mm

Number of Ports :

1

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Functions :

1

Operating Mode :

SYNCHRONOUS

ECCN Code :

EAR99

Number of Terminations :

66

Moisture Sensitivity Level (MSL) :

4 (72 Hours)

Clock Frequency :

167MHz

Qualification Status :

Not Qualified

Width :

10.16mm

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Output Characteristics :

3-STATE

Height Seated (Max) :

1.2mm

Standby Current-Max :

0.005A

Interleaved Burst Length :

248