MT46V128M4BN-75:D
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- Mfr.Part #
- MT46V128M4BN-75:D
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 48,260
- In Stock ：
- 48,260
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Max (Vsup) :
- 2.7V
- Packaging :
- Tray
- Output Characteristics :
- 3-STATE
- Peak Reflow Temperature (Cel) :
- 260
- Clock Frequency :
- 133MHz
- I/O Type :
- COMMON
- Number of Functions :
- 1
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Pin Count :
- 60
- Write Cycle Time - Word, Page :
- 15ns
- Memory Density :
- 536870912 bit
- Memory Format :
- DRAM
- Interleaved Burst Length :
- 248
- Memory Size :
- 512Mb 128M x 4
- ECCN Code :
- EAR99
- Length :
- 12.5mm
- Width :
- 10mm
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- HTS Code :
- 8542.32.00.28
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Memory Type :
- Volatile
- Height Seated (Max) :
- 1.2mm
- JESD-30 Code :
- R-PBGA-B60
- Number of Ports :
- 1
- Number of Terminations :
- 60
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Voltage - Supply :
- 2.3V~2.7V
- Supply Voltage :
- 2.5V
- Surface Mount :
- yes
- Memory Width :
- 4
- Terminal Position :
- BOTTOM
- Access Time :
- 750ps
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AUTO/SELF REFRESH
- Operating Supply Voltage :
- 2.5V
- Organization :
- 128MX4
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage-Min (Vsup) :
- 2.3V
- Terminal Pitch :
- 1mm
- Standby Current-Max :
- 0.005A
- Base Part Number :
- MT46V128M4
- Published :
- 2007
- Refresh Cycles :
- 8192
- Sequential Burst Length :
- 248
- Package / Case :
- 60-TFBGA
- Operating Temperature :
- 0°C~70°C TA
- Datasheets
- MT46V128M4BN-75:D
Memory Micron Technology MT46V128M4BN-75:D Overview
Introducing the Memory Micron Technology MT46V128M4BN-75:D, a high-performance Integrated Circuit (IC) from Micron Technology, specifically designed to meet the robust needs of advanced digital systems. This DRAM module boasts a substantial 512 Mbit capacity and utilizes a parallel interface, all packaged compactly in a 60FBGA format. Ideal for applications demanding high-speed data transfer and substantial storage, this product ensures reliability and efficiency. Its design and build are suited for sophisticated systems that require precise and swift memory operations, making it a critical component in both commercial and industrial applications.
MT46V128M4BN-75:D Features
The MT46V128M4BN-75:D DRAM from Micron Technology is engineered with advanced features that enhance its performance and usability. Key features include a 512 Mbit density, which provides ample storage for complex processes, and a parallel interface that ensures high-speed data communication. The compact 60FBGA package is designed for optimized space utilization and improved thermal characteristics, which is crucial for maintaining system stability and performance under varying operational conditions.
MT46V128M4BN-75:D Applications
- Consumer Electronics: Utilized in devices such as high-definition television sets and gaming consoles, where large, rapid memory is crucial for user experience.
- Computing: Integral for PCs and servers, supporting complex computations and large-scale data processing with its high-speed, high-density memory capabilities.
- Mobile Devices: Employs in smartphones and tablets to manage multiple applications and user data efficiently, enhancing device responsiveness and functionality.
- Networking: Critical in routers and switches, where fast memory helps manage the high throughput and data-intensive operations required for network traffic management.
- Automotive: Used in advanced driver-assistance systems (ADAS) to process real-time data from vehicle sensors, aiding in safer and smarter vehicle functionalities.
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