MT46V128M4BN-6:D
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- Mfr.Part #
- MT46V128M4BN-6:D
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 14,162
- In Stock ：
- 14,162
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Clock Frequency :
- 167MHz
- Number of Functions :
- 1
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Standby Current-Max :
- 0.005A
- Memory Type :
- Volatile
- Pin Count :
- 60
- Organization :
- 128MX4
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- Terminal Pitch :
- 1mm
- Operating Temperature :
- 0°C~70°C TA
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup) :
- 2.3V
- Base Part Number :
- MT46V128M4
- Memory Density :
- 536870912 bit
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Output Characteristics :
- 3-STATE
- Memory Interface :
- Parallel
- Refresh Cycles :
- 8192
- Voltage - Supply :
- 2.3V~2.7V
- Access Time :
- 700ps
- Write Cycle Time - Word, Page :
- 15ns
- Terminal Position :
- BOTTOM
- Sequential Burst Length :
- 248
- Surface Mount :
- yes
- Supply Current-Max :
- 0.405mA
- HTS Code :
- 8542.32.00.28
- Supply Voltage :
- 2.5V
- Package / Case :
- 60-TFBGA
- Operating Supply Voltage :
- 2.5V
- Qualification Status :
- Not Qualified
- Memory Width :
- 4
- Number of Ports :
- 1
- Mounting Type :
- Surface Mount
- Width :
- 10mm
- Operating Mode :
- SYNCHRONOUS
- Published :
- 2007
- Interleaved Burst Length :
- 248
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-30 Code :
- R-PBGA-B60
- Lead Free :
- Lead Free
- Memory Size :
- 512Mb 128M x 4
- JESD-609 Code :
- e1
- Length :
- 12.5mm
- Packaging :
- Tray
- Number of Terminations :
- 60
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage-Max (Vsup) :
- 2.7V
- I/O Type :
- COMMON
- Datasheets
- MT46V128M4BN-6:D
Memory Micron Technology MT46V128M4BN-6:D Overview
The Memory Micron Technology MT46V128M4BN-6:D is a high-performance IC DRAM featuring a 512Mbit capacity, optimized for applications requiring rapid access to large volumes of data. Manufactured by Micron Technology, this component utilizes advanced DRAM technology to offer exceptional speed and reliability. Its compact 60FBGA package ensures a minimal footprint, making it ideal for densely-packed PCB layouts. The product's robust design and efficient power management make it an excellent choice for designers looking to enhance system performance while maintaining energy efficiency.
MT46V128M4BN-6:D Features
This DRAM IC is designed for high-speed data retrieval and offers a variety of features that make it suitable for a broad range of applications. Key features include a parallel interface for increased data transfer speeds, a nominal supply voltage that supports low power consumption, and advanced packaging technology for improved thermal characteristics.
MT46V128M4BN-6:D Applications
- Computing Systems: Used in both personal computers and servers for enhancing processing speeds by providing rapid data buffer management.
- Networking Equipment: Integral for routers and switches, enabling efficient packet buffering to ensure smooth data transmission and low latency.
- Consumer Electronics: Applied in devices such as smart TVs and gaming consoles, where large memory bandwidth is crucial for multimedia processing and rendering.
- Mobile Devices: Helps in managing multiple applications simultaneously, enhancing multitasking capabilities in smartphones and tablets.
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