MT46H64M16LFBF-6 IT:B

Manufacturer :

Micron Technology

Product Category :

Memory

Published :

2012

Memory Size :

1Gb 64M x 16

Organization :

64MX16

JESD-609 Code :

e1

Supply Voltage-Min (Vsup) :

1.7V

Operating Temperature :

-40°C~85°C TA

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AUTO/SELF REFRESH

Surface Mount :

yes

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Packaging :

Tray

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

Supply Voltage :

1.8V

I/O Type :

COMMON

Package / Case :

60-VFBGA

Voltage - Supply :

1.7V~1.95V

Memory Format :

DRAM

Interleaved Burst Length :

24816

Memory Type :

Volatile

Memory Interface :

Parallel

Pbfree Code :

yes

Number of Terminations :

60

HTS Code :

8542.32.00.32

Write Cycle Time - Word, Page :

15ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Qualification Status :

Not Qualified

Sequential Burst Length :

24816

RoHS Status :

ROHS3 Compliant

Output Characteristics :

3-STATE

Supply Voltage-Max (Vsup) :

1.95V

Terminal Pitch :

0.8mm

Width :

8mm

Number of Functions :

1

Pin Count :

60

Refresh Cycles :

8192

Clock Frequency :

166MHz

Access Time :

5ns

Number of Ports :

1

JESD-30 Code :

R-PBGA-B60

Height Seated (Max) :

1mm

Length :

9mm

Power Supplies :

1.8V

Memory Width :

16

Supply Current-Max :

0.12mA

Standby Current-Max :

0.00001A

Memory Density :

1073741824 bit

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Base Part Number :

MT46H64M16