MT46H4M32LFB5-5:K
- Mfr.Part #
- MT46H4M32LFB5-5:K
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 47,740
- In Stock :
- 47,740
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Radiation Hardening :
- No
- Access Time :
- 5ns
- Voltage - Supply :
- 1.7V~1.95V
- Memory Width :
- 32
- JESD-609 Code :
- e1
- Number of Ports :
- 1
- Terminal Pitch :
- 0.8mm
- HTS Code :
- 8542.32.00.02
- Memory Type :
- Volatile
- Base Part Number :
- MT46H4M32
- Terminal Finish :
- TIN SILVER COPPER
- Lead Free :
- Lead Free
- Write Cycle Time - Word, Page :
- 15ns
- Package / Case :
- 90-VFBGA
- Additional Feature :
- AUTO/SELF REFRESH
- Operating Temperature :
- 0°C~70°C TA
- Mount :
- Surface Mount
- Operating Supply Voltage :
- 1.8V
- Supply Voltage :
- 1.8V
- Number of Functions :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Nominal Supply Current :
- 110mA
- Terminal Position :
- BOTTOM
- Organization :
- 4MX32
- Memory Interface :
- Parallel
- Number of Pins :
- 90
- Memory Format :
- DRAM
- I/O Type :
- COMMON
- Refresh Cycles :
- 4096
- Interleaved Burst Length :
- 24816
- Clock Frequency :
- 200MHz
- Packaging :
- Tray
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Memory Size :
- 128Mb 4M x 32
- Output Characteristics :
- 3-STATE
- Pin Count :
- 90
- ECCN Code :
- EAR99
- Height Seated (Max) :
- 1mm
- Published :
- 2012
- Density :
- 128 Mb
- Sequential Burst Length :
- 24816
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Terminations :
- 90
- Standby Current-Max :
- 0.00001A
- Length :
- 13mm
- Supply Voltage-Max (Vsup) :
- 1.95V
- Address Bus Width :
- 14b
- Datasheets
- MT46H4M32LFB5-5:K

Memory Micron Technology MT46H4M32LFB5-5:K Overview
Introducing the Memory Micron Technology MT46H4M32LFB5-5:K, a high-performance IC DRAM component designed by Micron Technology. This product boasts a substantial 128Mbit capacity and utilizes a parallel interface, encapsulated in a compact 90VFBGA package. Ideal for applications requiring high-speed data processing and storage, this DRAM offers exceptional reliability and durability. Its compact design and power efficiency make it an excellent choice for designers focusing on minimizing device footprint while maximizing performance.
MT46H4M32LFB5-5:K Features
The MT46H4M32LFB5-5:K includes several key features that enhance its usability in various high-demand environments. These include low latency and power consumption, high data bandwidth, and robust temperature resilience, making it suitable for both commercial and industrial applications.
MT46H4M32LFB5-5:K Applications
- Consumer Electronics: Utilized in devices such as smartphones, tablets, and gaming consoles where quick access to large amounts of data is crucial.
- Computing: Integral for use in personal computers and servers for efficient processing and retrieval of data in high-load conditions.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) where rapid data processing is vital for real-time decision-making.
- Telecommunications: Used in networking hardware, such as routers and switches, to ensure swift data flow and buffer management across networks.
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