MT41K512M4HX-15E:D

Manufacturer :

Micron Technology

Product Category :

Memory

Number of Ports :

1

JESD-609 Code :

e1

Supply Voltage :

1.35V

Number of Terminations :

78

Base Part Number :

MT41K512M4

Memory Format :

DRAM

Memory Width :

4

Sequential Burst Length :

8

Height Seated (Max) :

1.2mm

Interleaved Burst Length :

8

HTS Code :

8542.32.00.36

Terminal Finish :

TIN SILVER COPPER

Memory Density :

2147483648 bit

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PBGA-B78

Supply Voltage-Min (Vsup) :

1.283V

Output Characteristics :

3-STATE

Qualification Status :

Not Qualified

Memory Interface :

Parallel

Operating Supply Voltage :

1.35V

Operating Temperature :

0°C~95°C TC

Length :

11.5mm

Terminal Position :

BOTTOM

Supply Current-Max :

0.385mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AUTO/SELF REFRESH

Clock Frequency :

667MHz

Access Time :

13.5ns

Voltage - Supply :

1.283V~1.45V

Operating Mode :

SYNCHRONOUS

Organization :

512MX4

Standby Current-Max :

0.012A

ECCN Code :

EAR99

Supply Voltage-Max (Vsup) :

1.45V

Terminal Pitch :

0.8mm

Width :

9mm

Package / Case :

78-TFBGA

Memory Size :

2Gb 512M x 4

Mounting Type :

Surface Mount

Refresh Cycles :

8192

Pin Count :

78

Number of Functions :

1

Pbfree Code :

yes

Published :

2011

Packaging :

Tray

Memory Type :

Volatile

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Lead Free :

Lead Free

I/O Type :

COMMON