MT41J64M16JT-187E:G
- Mfr.Part #
- MT41J64M16JT-187E:G
- Manufacturer
- Micron Technology
- Package / Case
- 96-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 96FBGA
- Stock
- 32,772
- In Stock :
- 32,772
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Interface :
- Parallel
- Supply Voltage-Min (Vsup) :
- 1.425V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Pitch :
- 0.8mm
- I/O Type :
- COMMON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Supply :
- 1.425V~1.575V
- Mounting Type :
- Surface Mount
- Interleaved Burst Length :
- 8
- Base Part Number :
- MT41J64M16
- Output Characteristics :
- 3-STATE
- Operating Temperature :
- 0°C~95°C TC
- Clock Frequency :
- 533MHz
- Pin Count :
- 96
- Package / Case :
- 96-TFBGA
- Density :
- 1 Gb
- Access Mode :
- MULTI BANK PAGE BURST
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- Address Bus Width :
- 16b
- Packaging :
- Tray
- Published :
- 2011
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Memory Width :
- 16
- Sequential Burst Length :
- 8
- Memory Size :
- 1Gb 64M x 16
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Organization :
- 64MX16
- Radiation Hardening :
- No
- Number of Pins :
- 96
- Number of Ports :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Lead Free :
- Lead Free
- HTS Code :
- 8542.32.00.32
- JESD-609 Code :
- e1
- Nominal Supply Current :
- 155mA
- Operating Supply Voltage :
- 1.5V
- Standby Current-Max :
- 0.012A
- Additional Feature :
- AUTO/SELF REFRESH
- Length :
- 14mm
- Supply Voltage :
- 1.5V
- RoHS Status :
- ROHS3 Compliant
- Access Time (Max) :
- 0.15 ns
- Number of Terminations :
- 96
- Refresh Cycles :
- 8192
- Memory Type :
- Volatile
- Supply Voltage-Max (Vsup) :
- 1.575V
- Data Bus Width :
- 16b
- Number of Functions :
- 1
- Datasheets
- MT41J64M16JT-187E:G

Memory Micron Technology MT41J64M16JT-187E:G Overview
Introducing the Memory Micron Technology MT41J64M16JT-187E:G, a cutting-edge DRAM module designed for high-performance computing and storage solutions. With a capacity of 1Gbit and using a 96FBGA package, this integrated circuit stands out for its reliability and efficiency. Manufactured by Micron Technology, a leader in semiconductor innovation, this product is tailored for systems requiring substantial memory bandwidth and speed. Its high-speed parallel interface ensures exceptional throughput and responsiveness, making it a cornerstone for applications demanding intense data processing and storage capabilities.
MT41J64M16JT-187E:G Features
The MT41J64M16JT-187E:G DRAM module boasts numerous features that make it an essential component for advanced electronic systems. These include a 1Gbit density for extensive data handling, parallel interface for fast data transfer rates, and a compact 96FBGA package that allows for efficient space utilization on PCBs. The product is also designed for low power consumption, enhancing its suitability for power-sensitive applications.
MT41J64M16JT-187E:G Applications
- Computing Systems: Utilized in both personal computers and servers, this DRAM module supports operating systems and applications requiring rapid access to large amounts of data, thus improving system performance and user experience.
- Mobile Devices: Integral for enhancing the multitasking abilities of smartphones and tablets, where space and power efficiency are critical.
- Gaming Consoles: Enhances gaming experiences by speeding up load times and facilitating complex, real-time graphics rendering.
- Networking Equipment: Critical in routers and switches, ensuring swift data packet transfers and efficient bandwidth management for improved network performance.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) to process multiple data inputs simultaneously for vehicle safety and functionality enhancements.
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