MT41J512M8THU-187E:A

Manufacturer :

Micron Technology

Product Category :

Memory

Density :

4 GB

Access Time :

13.125ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tray

Additional Feature :

AUTO/SELF REFRESH

Operating Supply Voltage :

1.5V

Mounting Type :

Surface Mount

Operating Temperature :

0°C~95°C TC

JESD-609 Code :

e1

Organization :

512MX8

Supply Voltage :

1.5V

HTS Code :

8542.32.00.36

Base Part Number :

MT41J512M8

I/O Type :

COMMON

Terminal Position :

BOTTOM

Supply Voltage-Max (Vsup) :

1.575V

Memory Format :

DRAM

Supply Current-Max :

0.445mA

Number of Terminations :

82

Standby Current-Max :

0.035A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Voltage - Supply :

1.425V~1.575V

Number of Functions :

1

Supply Voltage-Min (Vsup) :

1.425V

Memory Size :

4Gb 512M x 8

Terminal Pitch :

0.8mm

Pin Count :

82

Number of Ports :

1

Memory Type :

Volatile

Address Bus Width :

18b

Refresh Cycles :

8192

Memory Width :

8

Package / Case :

82-FBGA

Published :

2002

Memory Interface :

Parallel

Output Characteristics :

3-STATE

Length :

15mm

Surface Mount :

yes

Height Seated (Max) :

1.35mm

Data Bus Width :

8B

Clock Frequency :

533MHz

Number of Pins :

82

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

3 (168 Hours)