MT41J512M8RH-093:E

Manufacturer :

Micron Technology

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Standby Current-Max :

0.018A

Terminal Position :

BOTTOM

Number of Pins :

78

Operating Supply Voltage :

1.5V

Interleaved Burst Length :

8

Density :

4 GB

Output Characteristics :

3-STATE

Radiation Hardening :

No

Sequential Burst Length :

8

Address Bus Width :

19b

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage :

1.5V

RoHS Status :

ROHS3 Compliant

Height Seated (Max) :

1.2mm

Supply Voltage-Max (Vsup) :

1.575V

Supply Current-Max :

0.282mA

Clock Frequency :

1066MHz

Refresh Cycles :

8192

Data Bus Width :

8B

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

78

Mount :

Surface Mount

Memory Size :

4Gb 512M x 8

Mounting Type :

Surface Mount

Number of Functions :

1

Access Time :

20ns

Number of Ports :

1

I/O Type :

COMMON

Published :

2014

Operating Temperature :

0°C~95°C TC

Base Part Number :

MT41J512M8

Organization :

512MX8

Packaging :

Tray

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Supply Voltage-Min (Vsup) :

1.425V

JESD-609 Code :

e1

Voltage - Supply :

1.425V~1.575V

Memory Width :

8

Package / Case :

78-TFBGA

Memory Interface :

Parallel

Length :

10.5mm