MT29F4G16ABAEAH4:E

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Mfr.Part #
MT29F4G16ABAEAH4:E
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 4GBIT PARALLEL 63VFBGA
Stock
35,917
In Stock :
35,917

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Manufacturer :
Micron Technology
Product Category :
Memory
Factory Lead Time :
4 Weeks
Operating Temperature :
0°C~70°C TA
Voltage - Supply :
2.7V~3.6V
Packaging :
Bulk
Memory Type :
Non-Volatile
Density :
4 GB
Sync/Async :
ASYNCHRONOUS
Word Size :
16b
Memory Size :
4Gb 256M x 16
Max Supply Voltage :
3.6V
Min Supply Voltage :
2.7V
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Address Bus Width :
29b
Published :
2015
Interface :
Parallel
Operating Supply Voltage :
3.3V
Nominal Supply Current :
30mA
Number of Pins :
63
Max Operating Temperature :
70°C
Memory Format :
Flash
Min Operating Temperature :
0°C
Memory Interface :
Parallel
Supplier Device Package :
63-VFBGA (9x11)
Mount :
Surface Mount
Base Part Number :
MT29F4G16
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Package / Case :
63-VFBGA
Datasheets
MT29F4G16ABAEAH4:E
Introducing Memory Micron Technology MT29F4G16ABAEAH4:E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:0°C~70°C TA, Mounting Type:Surface Mount, Number of Pins:63, Base Part Number:MT29F4G16, Package / Case:63-VFBGA, MT29F4G16ABAEAH4:E pinout, MT29F4G16ABAEAH4:E datasheet PDF, MT29F4G16ABAEAH4:E amp .Beyond Memory Micron Technology MT29F4G16ABAEAH4:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F4G16ABAEAH4:E


Memory Micron Technology MT29F4G16ABAEAH4:E Overview

The Memory Micron Technology MT29F4G16ABAEAH4:E is a high-performance 4Gbit NAND flash memory component utilizing a parallel interface, housed in a compact 63VFBGA package. Designed by Micron Technology, a leader in integrated memory solutions, this IC flash memory is engineered for high-speed and reliable data storage. With its advanced control features, it ensures enhanced data integrity, making it ideal for applications requiring extensive read/write operations and long-term reliability. Its suitability for demanding applications underscores its potential for B2B customers seeking robust, scalable memory solutions for their advanced digital products.

MT29F4G16ABAEAH4:E Features

This NAND flash memory IC features a 4Gbit storage capacity with a parallel interface that ensures high data throughput and reduced latency. Its 63VFBGA packaging is designed for minimal space usage while providing optimal thermal stability, making it ideal for tightly packed system designs. Additionally, the device supports a wide range of operating temperatures, which enhances its versatility in different industrial environments.

MT29F4G16ABAEAH4:E Applications

  • Embedded Systems: Utilized in the core memory components of embedded systems, this IC provides a dependable storage solution that enhances device responsiveness and durability.
  • Mobile Devices: Serves as secondary storage or for memory expansion in smartphones and tablets, where long-term reliability and energy efficiency are critical.
  • Automotive Applications: Ideal for use in automotive environments due to its high endurance and wide operational temperature range, supporting applications such as infotainment systems and advanced driver-assistance systems (ADAS).
  • Industrial Automation: Employs robust storage capabilities necessary for managing complex operations in industrial automation systems, ensuring data integrity and quick access under various conditions.
  • Consumer Electronics: Acts as primary storage in consumer electronics like digital cameras and gaming consoles, providing high-speed data access and reliability for an enhanced user experience.
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Shipping Cost

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