MT29F2G16ABBEAH4-IT:E

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Mfr.Part #
MT29F2G16ABBEAH4-IT:E
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 2GBIT PARALLEL 63VFBGA
Stock
369
In Stock :
369

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Manufacturer :
Micron Technology
Product Category :
Memory
Base Part Number :
MT29F2G16
Voltage - Supply :
1.7V~1.95V
RoHS Status :
ROHS3 Compliant
Ready/Busy :
yes
Address Bus Width :
28b
Memory Width :
16
Package / Case :
63-VFBGA
Number of Functions :
1
Page Size :
1Kwords
Radiation Hardening :
No
Height Seated (Max) :
1mm
Nominal Supply Current :
20mA
Data Polling :
No
Memory Type :
Non-Volatile
Operating Supply Voltage :
1.8V
Density :
2 GB
Factory Lead Time :
3 Weeks
Memory Size :
2Gb 128M x 16
Access Time (Max) :
25 ns
Standby Current-Max :
0.00005A
Number of Sectors/Size :
2k
Memory Interface :
Parallel
Memory Format :
Flash
Number of Terminations :
63
Terminal Pitch :
0.8mm
Toggle Bit :
No
Terminal Position :
BOTTOM
Mounting Type :
Surface Mount
Operating Temperature :
-40°C~85°C TA
Sync/Async :
ASYNCHRONOUS
Length :
11mm
Organization :
128MX16
Supply Voltage-Min (Vsup) :
1.7V
Packaging :
Bulk
Word Size :
16b
Command User Interface :
yes
Supply Voltage-Max (Vsup) :
1.95V
Published :
2010
Mount :
Surface Mount
Sector Size :
64K
Number of Pins :
63
Supply Voltage :
1.8V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Introducing Memory Micron Technology MT29F2G16ABBEAH4-IT:E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MT29F2G16, Package / Case:63-VFBGA, Number of Terminations:63, Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Pins:63, MT29F2G16ABBEAH4-IT:E pinout, MT29F2G16ABBEAH4-IT:E datasheet PDF, MT29F2G16ABBEAH4-IT:E amp .Beyond Memory Micron Technology MT29F2G16ABBEAH4-IT:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F2G16ABBEAH4-IT:E


Memory Micron Technology MT29F2G16ABBEAH4-IT:E Overview

The Memory Micron Technology MT29F2G16ABBEAH4-IT:E is a high-capacity, high-performance integrated circuit designed to meet the intense demands of modern digital storage. Manufactured by Micron Technology, this IC flash memory offers a substantial 2 Gbit of storage with a parallel interface, encapsulated in a compact 63-VFBGA package. Engineered for reliability and durability, it provides an optimal solution for developers looking to enhance the storage capabilities of their sophisticated electronic devices while maintaining footprint efficiency and power management.

MT29F2G16ABBEAH4-IT:E Features

  • High-density 2 Gbit storage capacity enables substantial data management and storage possibilities.
  • Parallel interface ensures high-speed data transfer rates that are essential for performance-critical applications.
  • Compact 63-VFBGA package allows for minimal space occupation on PCBs, making it ideal for space-sensitive applications.
  • Robust design suited for extended operational longevity under a wide range of environmental conditions.

MT29F2G16ABBEAH4-IT:E Applications

  • Mobile Devices: Utilized in smartphones and tablets for storing operating system, applications, and user data, enhancing device responsiveness and storage capabilities.
  • Automotive Electronics: Employs in advanced driver-assistance systems (ADAS) and infotainment systems, providing the necessary data buffering and logging capabilities required in modern vehicles.
  • Industrial Automation: Integral for data logging and firmware storage in industrial control systems, improving system reliability and performance in harsh environments.
  • Consumer Electronics: Key component in gaming consoles and set-top boxes, where high-speed data access and reliability are critical for user experience.
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Shipping Cost

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