MT29F2G08ABBEAHC:E TR
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- Mfr.Part #
- MT29F2G08ABBEAHC:E TR
- Manufacturer
- Micron Technology
- Package / Case
- 63-VFBGA
- Datasheet
- Download
- Description
- IC FLASH 2GBIT PARALLEL 63VFBGA
- Stock
- 41,404
- In Stock ：
- 41,404
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Max (Vsup) :
- 1.95V
- Number of Terminations :
- 63
- Memory Interface :
- Parallel
- Organization :
- 256MX8
- Operating Temperature :
- 0°C~70°C TA
- Memory Width :
- 8
- Number of Functions :
- 1
- JESD-609 Code :
- e1
- Operating Mode :
- ASYNCHRONOUS
- Programming Voltage :
- 1.8V
- Width :
- 10.5mm
- Memory Density :
- 2147483648 bit
- JESD-30 Code :
- R-PBGA-B63
- Height Seated (Max) :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage :
- 1.8V
- Package / Case :
- 63-VFBGA
- Memory Size :
- 2Gb 256M x 8
- Length :
- 13mm
- Base Part Number :
- MT29F1G08
- Published :
- 2013
- Voltage - Supply :
- 1.7V~1.95V
- Memory Type :
- Non-Volatile
- Supply Voltage-Min (Vsup) :
- 1.7V
- Packaging :
- Digi-Reel®
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 3 Weeks
- Pin Count :
- 63
- Terminal Position :
- BOTTOM
- Memory Format :
- Flash
- Terminal Pitch :
- 0.8mm
- Datasheets
- MT29F2G08ABBEAHC:E TR
Memory Micron Technology MT29F2G08ABBEAHC:E TR Overview
Introducing the robust Memory Micron Technology MT29F2G08ABBEAHC:E TR, a high-capacity 2Gbit NAND flash memory device that excels in both performance and reliability. Designed by Micron Technology, this IC flash unit integrates cutting-edge technology suitable for a broad range of industrial applications. It utilizes a parallel interface encapsulated in a compact 63-ball VFBGA package, ensuring optimal density and functionality. This product is ideal for businesses looking to enhance their data storage capabilities with speed and endurance, making it a pivotal component in the advancement of modern technology solutions.
MT29F2G08ABBEAHC:E TR Features
The MT29F2G08ABBEAHC:E TR flash memory IC boasts several key features that make it a standout choice for high-demand applications. It offers a substantial 2Gbit storage capacity, enabling extensive data management and retention. The parallel interface promises high-speed data transfer and communication, which is critical in complex electronic setups. Moreover, the 63VFBGA packaging not only minimizes space usage but also enhances thermal management, contributing to the device's overall durability and performance stability.
MT29F2G08ABBEAHC:E TR Applications
- Embedded Systems: Utilized in microcontroller-based applications to store firmware and application software, enhancing device responsiveness and functionality.
- Consumer Electronics: Integral in smartphones, tablets, and other portable devices for storing operating systems and user data, ensuring quick access and reliable storage.
- Automotive Applications: Employed in automotive infotainment systems to manage multimedia content and navigation data, improving user experience and system performance.
- Industrial Automation: Applied in industrial control systems for logging extensive data and program instructions, which are crucial for operational accuracy and machine learning processes.
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