MT29F2G08ABBEAH4:E
- Mfr.Part #
- MT29F2G08ABBEAH4:E
- Manufacturer
- Micron Technology
- Package / Case
- 63-VFBGA
- Datasheet
- Download
- Description
- IC FLASH 2GBIT PARALLEL 63VFBGA
- Stock
- 1,063
- In Stock :
- 1,063
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Number of Terminations :
- 63
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Height Seated (Max) :
- 1mm
- Organization :
- 256MX8
- Factory Lead Time :
- 3 Weeks
- Memory Size :
- 2Gb 256M x 8
- Published :
- 2010
- Page Size :
- 2kB
- Ready/Busy :
- yes
- Address Bus Width :
- 29b
- Voltage - Supply :
- 1.7V~1.95V
- Command User Interface :
- yes
- Operating Supply Voltage :
- 1.8V
- Number of Pins :
- 63
- Sync/Async :
- ASYNCHRONOUS
- Data Polling :
- No
- Memory Interface :
- Parallel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Memory Type :
- Non-Volatile
- Supply Voltage-Max (Vsup) :
- 1.95V
- Standby Current-Max :
- 0.00005A
- Mount :
- Surface Mount
- Nominal Supply Current :
- 20mA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Contact Plating :
- Copper, Silver, Tin
- Number of Sectors/Size :
- 2k
- Radiation Hardening :
- No
- Memory Width :
- 8
- RoHS Status :
- ROHS3 Compliant
- Density :
- 2 GB
- Sector Size :
- 128K
- Toggle Bit :
- No
- Memory Format :
- Flash
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Functions :
- 1
- Length :
- 11mm
- Base Part Number :
- MT29F2G08
- Word Size :
- 8B
- Terminal Pitch :
- 0.8mm
- Lead Free :
- Lead Free
- Supply Voltage :
- 1.8V
- Package / Case :
- 63-VFBGA
- Operating Temperature :
- 0°C~70°C TA
- Access Time (Max) :
- 25 ns
- Datasheets
- MT29F2G08ABBEAH4:E

Memory Micron Technology MT29F2G08ABBEAH4:E Overview
Unlock the potential of high-performance and space-efficient digital storage with the Memory Micron Technology MT29F2G08ABBEAH4:E, a leading-edge 2Gbit NAND flash memory. Manufactured by Micron Technology, this IC FLASH integrates seamlessly into a variety of demanding applications, offering robust data integrity and retention. Designed for parallel interfaces, it is housed in a compact 63VFBGA package that ensures minimal footprint while delivering maximal reliability and performance. This memory solution is ideal for businesses looking to scale operations or enhance system capabilities with high-density, reliable storage.
MT29F2G08ABBEAH4:E Features
The MT29F2G08ABBEAH4:E flash memory chip boasts several key features that make it an excellent choice for both sophisticated industrial applications and consumer electronics. It features a large 2GBit capacity, efficient parallel interface for high-speed data transfer, and low-power operation to extend device longevity. Its 63VFBGA packaging not only saves space but also enhances thermal management, contributing to the overall durability and performance of the memory module.
MT29F2G08ABBEAH4:E Applications
- Smartphones and Tablets: Provides high-density, non-volatile memory storage necessary for operating systems, applications, and user data, facilitating quick access and reliable performance.
- Embedded Systems: Utilized in various embedded applications, where long-term reliability and high endurance are crucial, such as in automotive control systems, industrial machines, and smart sensors.
- Consumer Electronics: Ideal for use in devices like digital cameras and gaming devices, where large, fast storage is needed for user content such as photos, videos, and game data.
- Networking Equipment: Helps manage firmware and state configurations in networking hardware, supporting the robust data handling required for network management and operations.
- Internet of Things (IoT) Devices: Serves as the critical memory component in IoT devices, enabling enhanced device functionality and connectivity while supporting the storage of new software updates and data logs.
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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