MT29F2G08ABAEAH4-ITX:E

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Mfr.Part #
MT29F2G08ABAEAH4-ITX:E
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 2GBIT PARALLEL 63VFBGA
Stock
11,056
In Stock :
11,056

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Manufacturer :
Micron Technology
Product Category :
Memory
Length :
11mm
Programming Voltage :
3.3V
Number of Terminations :
63
Supply Voltage :
3.3V
Memory Format :
Flash
RoHS Status :
ROHS3 Compliant
Height Seated (Max) :
1mm
Factory Lead Time :
5 Weeks
Base Part Number :
MT29F2G08
Memory Interface :
Parallel
JESD-609 Code :
e1
Operating Temperature :
-40°C~85°C TA
HTS Code :
8542.32.00.51
Time@Peak Reflow Temperature-Max (s) :
30
Published :
2013
Supply Voltage-Max (Vsup) :
3.6V
Memory Size :
2Gb 256M x 8
Packaging :
Tape and Reel (TR)
Package / Case :
63-VFBGA
Operating Mode :
ASYNCHRONOUS
Memory Width :
8
Mounting Type :
Surface Mount
JESD-30 Code :
R-PBGA-B63
Memory Density :
2147483648 bit
Memory Type :
Non-Volatile
Number of Functions :
1
Supply Voltage-Min (Vsup) :
2.7V
Organization :
256MX8
Terminal Pitch :
0.8mm
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
260
Voltage - Supply :
2.7V~3.6V
Terminal Position :
BOTTOM
ECCN Code :
3A991.B.1.A
Terminal Finish :
TIN SILVER COPPER
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Width :
9mm
Introducing Memory Micron Technology MT29F2G08ABAEAH4-ITX:E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:63, Base Part Number:MT29F2G08, Operating Temperature:-40°C~85°C TA, Package / Case:63-VFBGA, Mounting Type:Surface Mount, MT29F2G08ABAEAH4-ITX:E pinout, MT29F2G08ABAEAH4-ITX:E datasheet PDF, MT29F2G08ABAEAH4-ITX:E amp .Beyond Memory Micron Technology MT29F2G08ABAEAH4-ITX:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F2G08ABAEAH4-ITX:E


Memory Micron Technology MT29F2G08ABAEAH4-ITX:E Overview

Introducing the Memory Micron Technology MT29F2G08ABAEAH4-ITX:E, a high-performance IC FLASH device designed to elevate data storage capabilities across a range of applications. Engineered by Micron Technology, a leader in memory innovation, this component offers 2Gbit of parallel NAND flash memory, housed in a compact 63-VFBGA package. This product is optimized for applications demanding high speed, reliability, and substantial data integrity. Its robust design and advanced technology make it an excellent choice for expanding the memory footprint within embedded systems, enhancing performance and storage capacity efficiently.

MT29F2G08ABAEAH4-ITX:E Features

This flash memory IC boasts several key features, including a parallel interface for high-speed data transfer, a 2Gbit storage capacity, and a compact 63-VFBGA package that minimizes space usage while maximizing functionality. Its endurance and robust performance are suited for intense operational demands, making it a dependable component in critical environments.

MT29F2G08ABAEAH4-ITX:E Applications

  • Embedded Systems: Utilized to enhance the storage capabilities of embedded systems, providing reliable, quick access to large amounts of data which is crucial for real-time processing.
  • Consumer Electronics: Integrated into devices such as smartphones, tablets, and other personal electronics to manage and store large volumes of data efficiently.
  • Automotive Applications: Employed in advanced driver-assistance systems (ADAS) where high data integrity and speed are necessary for real-time vehicle system management.
  • Industrial Automation: Plays a crucial role in automation controls and data loggers, offering the robustness needed for industrial environments and high-volume data management.
  • Internet of Things (IoT) Devices: Provides the memory requirements essential for IoT devices, supporting the complex operations and connectivity demands of modern smart devices.
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