MT29F2G08ABAEAH4-IT:E

Manufacturer :

Micron Technology

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~85°C TA

Operating Mode :

ASYNCHRONOUS

Voltage - Supply :

2.7V~3.6V

Height Seated (Max) :

1mm

Terminal Position :

BOTTOM

Memory Density :

2147483648 bit

Surface Mount :

yes

Memory Width :

8

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Number of Functions :

1

Published :

2013

Package / Case :

63-VFBGA

Width :

9mm

Terminal Pitch :

0.8mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

Flash

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

3A991.B.1.A

Memory Size :

2Gb 256M x 8

Factory Lead Time :

5 Weeks

JESD-30 Code :

R-PBGA-B63

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

63

Time@Peak Reflow Temperature-Max (s) :

30

Supply Voltage :

3.3V

Organization :

256MX8

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage-Min (Vsup) :

2.7V

Base Part Number :

MT29F2G08

Memory Type :

Non-Volatile

JESD-609 Code :

e1

Programming Voltage :

2.7V

Length :

11mm

Packaging :

Tape and Reel (TR)

HTS Code :

8542.32.00.51