MSR2N3637UB
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- Mfr.Part #
- MSR2N3637UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 29,650
- In Stock ：
- 29,650
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology
- Manufacturer :
- Microchip
- Power - Max :
- 1 W
- Supplier Device Package :
- UB
- Product Status :
- Active
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Series :
- Military, MIL-PRF-19500/357
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- PNP
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 10μA
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Package / Case :
- 3-SMD, No Lead
- Package :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Subcategory :
- Transistors
- Datasheets
- MSR2N3637UB
PNP -65°C ~ 200°C (TJ) 10μA 3-SMD, No Lead Surface Mount
MSR2N3637UB/TR Overview
This device has a DC current gain of 100 @ 50mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Product package UB comes from the supplier.Collector Emitter Breakdown occurs at 175 VV - Maximum voltage.
MSR2N3637UB/TR Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
MSR2N3637UB/TR Applications
There are a lot of Microchip Technology
MSR2N3637UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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