MPS918G
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- Mfr.Part #
- MPS918G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A TO92
- Stock
- 38,600
- In Stock ：
- 38,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Collector Current :
- 50mA
- Max Power Dissipation :
- 350mW
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Published :
- 2006
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 400mV
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Power Dissipation :
- 350mW
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Current Rating :
- 50mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8mA 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Breakdown Voltage :
- 15V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Frequency :
- 600MHz
- Emitter Base Voltage (VEBO) :
- 3V
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 600MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Voltage - Rated DC :
- 15V
- hFE Min :
- 20
- Gain Bandwidth Product :
- 600MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Datasheets
- MPS918G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS918G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 8mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 1mA, 10mA.The emitter base voltage can be kept at 3V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 600MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
MPS918G Features
the DC current gain for this device is 20 @ 8mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 600MHz
MPS918G Applications
There are a lot of ON Semiconductor
MPS918G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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