MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Max Breakdown Voltage :

12.6V

Leakage Current :

200nA

Power Dissipation :

40W

JESD-609 Code :

e3

Published :

2007

Number of Pins :

3

REACH SVHC :

No SVHC

Surface Mount :

yes

Terminal Form :

Gull wing

Termination :

SMD/SMT

Pbfree Code :

yes

Base Part Number :

MMBZ*A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Applications :

GENERAL PURPOSE

Power Line Protection :

No

Max Reverse Leakage Current :

200nA

Height :

1.01mm

Diode Element Material :

SILICON

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Clamping Voltage :

17V

Number of Bidirectional Channels :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Working Voltage :

8.5V

Peak Pulse Current :

2.35A

Number of Terminations :

3

Reverse Standoff Voltage :

8.5V

Operating Temperature :

-55°C~150°C TJ

Type :

Zener

Test Current :

1mA

Pin Count :

3

Max Output Current :

2.35A

Max Surge Current :

2.35A

Width :

1.4mm

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

8.5V

Terminal Position :

Dual

Voltage - Rated DC :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Pulse Power :

40W

Contact Plating :

Tin

ESD Protection :

yes

Depth :

1.3mm

Number of Elements :

2

Forward Voltage :

900mV

Power Rating :

40W

Voltage - Clamping (Max) @ Ipp :

17V

Length :

2.9mm

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Breakdown Voltage :

11.4V

Reverse Breakdown Voltage :

11.4V

Packaging :

Tape and Reel (TR)

Direction :

Unidirectional

Element Configuration :

Common Anode