MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Diode Element Material :

SILICON

Number of Elements :

2

Clamping Voltage :

17V

Length :

2.9mm

Published :

2007

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Max Surge Current :

2.35A

Operating Supply Voltage :

8.5V

Working Voltage :

8.5V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Breakdown Voltage :

11.4V

Contact Plating :

Tin

Peak Pulse Power :

40W

Forward Voltage :

900mV

Depth :

1.3mm

Power Dissipation :

40W

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

MMBZ*A

Element Configuration :

Common Anode

Reverse Breakdown Voltage :

11.4V

Max Breakdown Voltage :

12.6V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Number of Bidirectional Channels :

1

Pin Count :

3

Max Output Current :

2.35A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Power Rating :

40W

Reverse Standoff Voltage :

8.5V

Direction :

Unidirectional

Type :

Zener

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Test Current :

1mA

Voltage - Clamping (Max) @ Ipp :

17V

Height :

1.01mm

Peak Pulse Current :

2.35A

Power Line Protection :

No

Max Reverse Leakage Current :

200nA

Applications :

GENERAL PURPOSE

ESD Protection :

yes

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Width :

1.4mm

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

12V

Termination :

SMD/SMT

Leakage Current :

200nA