MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Diode Element Material :

SILICON

Voltage - Clamping (Max) @ Ipp :

17V

Surface Mount :

yes

Max Breakdown Voltage :

12.6V

REACH SVHC :

No SVHC

Width :

1.4mm

Power Rating :

40W

Pin Count :

3

Contact Plating :

Tin

Leakage Current :

200nA

Type :

Zener

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Pulse Current :

2.35A

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Reverse Breakdown Voltage :

11.4V

ESD Protection :

yes

Voltage - Rated DC :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Depth :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Max Reverse Leakage Current :

200nA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Termination :

SMD/SMT

Forward Voltage :

900mV

Operating Supply Voltage :

8.5V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Breakdown Voltage :

11.4V

Element Configuration :

Common Anode

Working Voltage :

8.5V

Number of Elements :

2

Peak Pulse Power :

40W

Length :

2.9mm

Pbfree Code :

yes

Applications :

GENERAL PURPOSE

Max Output Current :

2.35A

Power Dissipation :

40W

Clamping Voltage :

17V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Position :

Dual

Base Part Number :

MMBZ*A

Reverse Standoff Voltage :

8.5V

Number of Pins :

3

Direction :

Unidirectional

Published :

2007

Height :

1.01mm

Power Line Protection :

No

Test Current :

1mA

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Max Surge Current :

2.35A

Number of Bidirectional Channels :

1