MMBZ12VALT1

Manufacturer :

onsemi

Product Category :

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Working Voltage :

8.5V

ESD Protection :

yes

Reverse Breakdown Voltage :

11.4V

Applications :

GENERAL PURPOSE

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Factory Lead Time :

4 Weeks

Base Part Number :

MMBZ*A

Reverse Standoff Voltage :

8.5V

Breakdown Voltage :

11.4V

Peak Pulse Current :

2.35A

Number of Elements :

2

Clamping Voltage :

17V

Leakage Current :

200nA

Termination :

SMD/SMT

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Diode Element Material :

SILICON

Direction :

Unidirectional

Contact Plating :

Tin

Type :

Zener

Number of Bidirectional Channels :

1

RoHS Status :

ROHS3 Compliant

Power Line Protection :

No

Operating Supply Voltage :

8.5V

Packaging :

Tape and Reel (TR)

Forward Voltage :

900mV

Max Output Current :

2.35A

REACH SVHC :

No SVHC

Length :

2.9mm

Depth :

1.3mm

Terminal Form :

Gull wing

Max Surge Current :

2.35A

Pin Count :

3

Published :

2007

Surface Mount :

yes

Voltage - Clamping (Max) @ Ipp :

17V

Test Current :

1mA

Pbfree Code :

yes

Power Dissipation :

40W

Power Rating :

40W

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Pulse Power :

40W

Width :

1.4mm

Lead Free :

Lead Free

Voltage - Rated DC :

12V

Max Reverse Leakage Current :

200nA

Height :

1.01mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

12.6V

Terminal Position :

Dual

Element Configuration :

Common Anode

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3